Experimental determination of thin film adhesion using 4 point bending specimen

2002 ◽  
Author(s):  
J.H. Kim ◽  
Sae Bom Lee ◽  
Y.Y. Earmme
Keyword(s):  
Thin Film ◽  
Experimental Determination ◽  
Film Adhesion ◽  
Thin Film Adhesion

Thin Film Adhesion Study in Microelectronic Packaging

1991 ◽  
Vol 239 ◽  
Author(s):  
H. S. Jeong ◽  
Y. Z. Chu ◽  
M. B. Freiler ◽  
C. Durning ◽  
R. C. White
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Microelectronic Packaging ◽  
Elastic Model ◽  
Blister Test ◽  
Linear Elastic ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Cure Temperature

ABSTRACTFracture energy (Ga) of BPDA-PDA polyimide (PI) on modified and unmodified Si surfaces was measured by the “blister” test as a function of final cure temperature. It is proven quantitatively that surface modification prior to thin film deposition enhances adhesion. Metal adhesion to PI was also measured by the same method. Reproducibility of the data was found to be exceptionally good for both cases. The linear elastic model is quite valid for the test of thin film adhesion. Therefore, it is believed that this test is best suited for Ga measurements in the study of thin film adhesion for microelectronic packaging.

Role of Thin Film Adhesion on Capillary Peeling

Nano Letters ◽  
2021 ◽  
Author(s):  
Jingcheng Ma ◽  
Jin Myung Kim ◽  
Muhammad Jahidul Hoque ◽  
Kamila J. Thompson ◽  
SungWoo Nam ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Adhesion ◽  
Thin Film Adhesion

Thermodynamic Analysis of Physical Vapor Deposited Inorganic Thin Films on Low Temperature Cofired Ceramic

2016 ◽  
Vol 13 (3) ◽  
pp. 95-101 ◽  
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
J. Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Film Adhesion ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high-reliability, high-density microelectronics. The functionality and robustness of rework have been increased through the incorporation of a physical vapor deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for radio frequency (RF) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. Although previous work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e., thermodynamic) parameters in the literature. This article analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxide coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability between pair of materials at specific temperature. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

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