Evaluation of the Switching Performance of Si, SiC and GaN Power Transistors

2019 ◽  
Author(s):  
Michal Frivaldsky ◽  
Michal Pipiska ◽  
Peter Sojka
Keyword(s):  
Power Transistors ◽  
Switching Performance

Impact of Package Parasitics on Switching Performance

2016 ◽  
Vol 858 ◽  
pp. 1057-1060 ◽  
Author(s):  
Konstantin Kostov ◽  
Jang Kwon Lim ◽  
Ya Fan Zhang ◽  
Mietek Bakowski
Keyword(s):  
High Speed ◽  
Electromagnetic Compatibility ◽  
Power Devices ◽  
Power Module ◽  
Negative Effects ◽  
Power Transistors ◽  
Switching Power ◽  
Switching Performance ◽  
Current Sharing ◽  
High Speed Switching

The package parasitics are a serious obstacle to the high-speed switching, which is necessary in order to reduce the switching power losses or reduce the size of power converters. In order to design new packages suitable for Silicon Carbide (SiC) power transistors, it is necessary to extract the parasitics of different packages and be able to predict the switching performance of the power devices placed in these packages. This paper presents two ways of simulating the switching performance in a half-bridge power module with SiC MOSFETs. The results show that the parasitic inductances in the power module slow down the switching, lead to poor current sharing, and together with the parasitic capacitances lead to oscillations. These negative effects can cause failures, increased losses, and electromagnetic compatibility issues.

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