A novel graph-based invariant region descriptor for image matching

Author(s):  
Francis Bowen ◽  
Eliza Y. Du ◽  
Jianghai Hu
2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Xiujie Qu ◽  
Fei Zhao ◽  
Mengzhe Zhou ◽  
Haili Huo

As the current binary descriptors have disadvantages of high computational complexity, no affine invariance, and the high false matching rate with viewpoint changes, a new binary affine invariant descriptor, called BAND, is proposed. Different from other descriptors, BAND has an irregular pattern, which is based on local affine invariant region surrounding a feature point, and it has five orientations, which are obtained by LBP effectively. Ultimately, a 256 bits binary string is computed by simple random sampling pattern. Experimental results demonstrate that BAND has a good matching result in the conditions of rotating, image zooming, noising, lighting, and small-scale perspective transformation. It has better matching performance compared with current mainstream descriptors, while it costs less time.


Author(s):  
A. Olsen ◽  
J.C.H. Spence ◽  
P. Petroff

Since the point resolution of the JEOL 200CX electron microscope is up = 2.6Å it is not possible to obtain a true structure image of any of the III-V or elemental semiconductors with this machine. Since the information resolution limit set by electronic instability (1) u0 = (2/πλΔ)½ = 1.4Å for Δ = 50Å, it is however possible to obtain, by choice of focus and thickness, clear lattice images both resembling (see figure 2(b)), and not resembling, the true crystal structure (see (2) for an example of a Fourier image which is structurally incorrect). The crucial difficulty in using the information between Up and u0 is the fractional accuracy with which Af and Cs must be determined, and these accuracies Δff/4Δf = (2λu2Δf)-1 and ΔCS/CS = (λ3u4Cs)-1 (for a π/4 phase change, Δff the Fourier image period) are strongly dependent on spatial frequency u. Note that ΔCs(up)/Cs ≈ 10%, independent of CS and λ. Note also that the number n of identical high contrast spurious Fourier images within the depth of field Δz = (αu)-1 (α beam divergence) decreases with increasing high voltage, since n = 2Δz/Δff = θ/α = λu/α (θ the scattering angle). Thus image matching becomes easier in semiconductors at higher voltage because there are fewer high contrast identical images in any focal series.


2010 ◽  
Vol 22 (6) ◽  
pp. 1042-1049 ◽  
Author(s):  
Jinde Wang ◽  
Xiaoyan Li ◽  
Lidan Shou ◽  
Gang Chen

2013 ◽  
Vol 32 (11) ◽  
pp. 3157-3160
Author(s):  
Zhen-hua XUE ◽  
Ping WANG ◽  
Chu-han ZHANG ◽  
Si-jia CAI

2011 ◽  
Vol 33 (9) ◽  
pp. 2152-2157 ◽  
Author(s):  
Yong-he Tang ◽  
Huan-zhang Lu ◽  
Mou-fa Hu

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