Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device

2003 ◽  
Author(s):  
A. Shappir ◽  
D. Levy ◽  
G. Geva ◽  
Y. Shacham-Diamand ◽  
E. Lusky ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Memory Device ◽  
Hot Carriers ◽  
Spatial Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory

A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric

1998 ◽  
Vol 510 ◽  
Author(s):  
K. Vanheusden ◽  
W.L. Warren ◽  
D.M. Fleetwood ◽  
R.A.B. Devine ◽  
B.L. Draper ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Hydrogen Diffusion ◽  
Gate Dielectric ◽  
Memory Device ◽  
Flat Band ◽  
Generation Process ◽  
Alkali Ions ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Kinetics Of

AbstractEver since the introduction of the metal-oxide-silicon field-effect-transistor (MOSFET), the nature of mobile and trapped charge in the oxide layer has been studied in great detail. For example, contamination with alkali ions such as sodium, causing instability of the flat-band voltage, was a major concern in the early days of MOS fabrication. Another SiO2 impurity of particular interest is hydrogen, because of its beneficial property of passivating charge traps. In this work we show that annealing of Si/SiO2/Si structures in forming gas (Ar:H2; 95:5) above 400 °C can introduce mobile H+ ions into the SiO2 layer. These mobile protons are confined within the oxide layer, and their space-charge distribution is well controllable and easily rearrangeable by applying a gate bias, making them potentially useful for application in a reliable nonvolatile MOSFET memory device. We present speed, retention, endurance, and radiation tolerance data showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as Flash.The chemical kinetics of mobile-proton reactions in the SiO2 film are also analyzed in greater detail. Our data show that the initial buildup of mobile protons during hydrogen annealing is limited by the rate of lateral hydrogen diffusion into the buried SiO2 films. The final density of mobile protons is determined by the cooling rate which terminates the annealing process and, in the case of subsequent anneals, by the temperature of the final anneal. To explain the observations, we propose a dynamical equilibrium model. Based on these insights, the incorporation of the proton generation process into standard semiconductor process flows is discussed.

A novel, nanocrystal (nc) based non-volatile memory device

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Memory Device ◽  
Fabrication Process ◽  
Floating Gate ◽  
Potential Candidate ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Electrical Characterization of Non Volatile Memory Device with In2O3 Nano-Particles Embedded in Polyimide

2007 ◽  
Vol 51 (96) ◽  
pp. 318 ◽  
Author(s):  
Dong Uk LEE ◽  
Seon Pil KIM ◽  
Jae-Hoon KIM ◽  
Eun Kyu KIM ◽  
Hyun-Mo KOO ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Memory Device ◽  
Nano Particles ◽  
Non Volatile Memory ◽  
Volatile Memory

A carbon nanotube non-volatile memory device using a photoresist gate dielectric

Carbon ◽  
2017 ◽  
Vol 124 ◽  
pp. 700-707 ◽  
Author(s):  
Yun Sun ◽  
Bing-Wei Wang ◽  
Peng-Xiang Hou ◽  
Chang Liu ◽  
Lin-Lin Fang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Gate Dielectric ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

2001 ◽  
Vol 34 (1-4) ◽  
pp. 113-120 ◽  
Author(s):  
Chang Ho Shin ◽  
Seon Yong Cha ◽  
Hee Chul Lee ◽  
Won-Jae Lee ◽  
Byoung-Gon Yu ◽  
...  
Keyword(s):  
Insulating Layer ◽  
Non Volatile Memory ◽  
Fabrication And Characterization ◽  
Volatile Memory

Programmable polymer thin film and non-volatile memory device

2004 ◽  
Vol 3 (12) ◽  
pp. 918-922 ◽  
Author(s):  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Charles R. Szmanda ◽  
Liping Ma ◽  
Yang Yang
Keyword(s):  
Thin Film ◽  
Memory Device ◽  
Polymer Thin Film ◽  
Non Volatile Memory ◽  
Volatile Memory

Organic non-volatile memory device based on cellulose fibers

2018 ◽  
Vol 232 ◽  
pp. 99-102 ◽  
Author(s):  
Anuja P. Rananavare ◽  
Sunil J. Kadam ◽  
Shivadatta V. Prabhu ◽  
Sachin S. Chavan ◽  
Prashant V. Anbhule ◽  
...  
Keyword(s):  
Cellulose Fibers ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Volatile Memory
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