Characterization of Pd/Sn ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS

2002 ◽  
Author(s):  
M.S. Islam ◽  
P.J. McNally ◽  
D.C. Cameron ◽  
P.A.F. Herbert
Keyword(s):  
Ohmic Contacts ◽  
Electrical Measurements

Characterization of AuGeNi ohmic contacts on n-GaAs using electrical measurements, Auger electron spectroscopy and X-ray diffractometry

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 807-810 ◽  
Author(s):  
J.B.B Oliveira ◽  
C.A Olivieri ◽  
J.C Galzerani ◽  
A.A Pasa ◽  
L.P Cardoso ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ohmic Contacts ◽  
Electrical Measurements ◽  
X Ray

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1312-1315 ◽  
Author(s):  
M. Lanza ◽  
M. Porti ◽  
M. Nafría ◽  
X. Aymerich ◽  
E. Whittaker ◽  
...  
Keyword(s):  
Electrical Measurements ◽  
High K

The Synthesis of Ce-Filled CoSb3 and Characterization of its Magnetic and Structural Properties

2003 ◽  
Vol 793 ◽  
Author(s):  
Arwyn L. E. Smalley ◽  
Brandon Howe ◽  
David C. Johnson
Keyword(s):  
Low Temperatures ◽  
Magnetic Measurements ◽  
Rietveld Analysis ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Ferromagnetic Component ◽  
Phase Pure ◽  
Powder Samples

ABSTRACTA series of cerium-containing CoSb3 samples were synthesized, with cerium quantities varying from 0 to 2 stoichiometric equivalents. These samples were annealed at low temperatures to crystallize the kinetically stable phases CexCo4Sb12 (x = 0–0.5). X-ray diffraction showed that these samples were phase pure, and Rietveld analysis on x-ray diffraction data from powder samples indicated that these samples were 25–88% crystalline. Electrical measurements showed that these samples are n-type, which was previously unknown in CexCo4Sb12. Magnetic measurements showed that the samples were paramagnetic due to the cerium being incorporated into the diamagnetic CoSb3 compound. In addition, they contained a ferromagnetic component that was attributed to the amorphous, cerium-containing phase.

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

2020 ◽  
Vol 1004 ◽  
pp. 725-730
Author(s):  
Fabrizio Roccaforte ◽  
Monia Spera ◽  
Salvatore Di Franco ◽  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Current Transport ◽  
Large Area ◽  
Si Substrates ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Thermionic Field Emission

Gallium nitride (GaN) and its AlGaN/GaN heterostructures grown on large area Si substrates are promising systems to fabricate power devices inside the existing Si CMOS lines. For this purpose, however, Au-free metallizations are required to avoid cross contaminations. In this paper, the mechanisms of current transport in Au-free metallization on AlGaN/GaN heterostructures are studied, with a focus on non-recessed Ti/Al/Ti Ohmic contacts. In particular, an Ohmic behavior of Ti/Al/Ti stacks was observed after an annealing at moderate temperature (600°C). The values of the specific contact resistance ρc decreased from 1.6×104 Ω.cm2 to 7×105 Ω.cm2 with increasing the annealing time from 60 to 180s. The temperature dependence of ρc indicated that the current flow is ruled by a thermionic field emission (TFE) mechanism, with barrier height values of 0.58 eV and 0.52 eV, respectively. Finally, preliminary results on the forward and reverse bias characterization of Au-free tungsten carbide (WC) Schottky contacts are presented. This contact exhibited a barrier height value of 0.82 eV.

Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

1985 ◽  
Vol 45 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung
Keyword(s):  
Integrated Circuits ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Threshold Temperature ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
Heavily Doped ◽  
And Diffusion

ABSTRACTIon-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

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