Analysis of discontinuity effects in development a fully integrated millimeter wave receiver front end

2009 ◽  
Author(s):  
Liang Wu ◽  
Yang Hou ◽  
Rong Qian ◽  
Xiaowei Sun
Keyword(s):  
Millimeter Wave ◽  
Fully Integrated ◽  
Front End ◽  
Millimeter Wave Receiver

Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology

2017 ◽  
Vol 64 (1) ◽  
pp. 536-543 ◽  
Author(s):  
Saeed Zeinolabedinzadeh ◽  
Ahmet C. Ulusoy ◽  
Farzad Inanlou ◽  
Hanbin Ying ◽  
Yunyi Gong ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Single Event ◽  
Single Event Effects ◽  
Sige Hbt ◽  
Front End ◽  
Millimeter Wave Receiver

A Low-Noise, High-Gain Quasi-Millimeter-Wave Receiver MMIC with a Very High Degree of Integration Using 3D-MMIC Technology

2011 ◽  
Vol E94-C (10) ◽  
pp. 1548-1556 ◽  
Author(s):  
Takana KAHO ◽  
Yo YAMAGUCHI ◽  
Kazuhiro UEHARA ◽  
Kiyomichi ARAKI
Keyword(s):  
Millimeter Wave ◽  
High Gain ◽  
Low Noise ◽  
High Degree ◽  
Very High ◽  
Millimeter Wave Receiver

Radiation Hardened Millimeter-Wave Receiver Implemented in 90nm, SiGe HBT Technology

2021 ◽  
pp. 1-1
Author(s):  
Ebrahim M. Al Seragi ◽  
Subhra Dash ◽  
K. Muthuseenu ◽  
John D. Cressler ◽  
Hugh J. Barnaby ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Sige Hbt ◽  
Radiation Hardened ◽  
Millimeter Wave Receiver

scholarly journals An Automatic Offset Calibration Method for Differential Charge-Based Capacitance Measurement

2021 ◽  
Vol 11 (2) ◽  
pp. 22
Author(s):  
Umberto Ferlito ◽  
Alfio Dario Grasso ◽  
Michele Vaiana ◽  
Giuseppe Bruno
Keyword(s):  
Standard Deviation ◽  
Output Voltage ◽  
Process Variations ◽  
Calibration Method ◽  
Capacitance Measurement ◽  
Effective Technique ◽  
Fully Integrated ◽  
Front End ◽  
Novel Method ◽  
On Chip

Charge-Based Capacitance Measurement (CBCM) technique is a simple but effective technique for measuring capacitance values down to the attofarad level. However, when adopted for fully on-chip implementation, this technique suffers output offset caused by mismatches and process variations. This paper introduces a novel method that compensates the offset of a fully integrated differential CBCM electronic front-end. After a detailed theoretical analysis of the differential CBCM topology, we present and discuss a modified architecture that compensates mismatches and increases robustness against mismatches and process variations. The proposed circuit has been simulated using a standard 130-nm technology and shows a sensitivity of 1.3 mV/aF and a 20× reduction of the standard deviation of the differential output voltage as compared to the traditional solution.

A 750 mV Fully Integrated Direct Conversion Receiver Front-End for GSM in 90-nm CMOS

2007 ◽  
Vol 42 (6) ◽  
pp. 1310-1317 ◽  
Author(s):  
Massimo Brandolini ◽  
Marco Sosio ◽  
Francesco Svelto
Keyword(s):  
Direct Conversion ◽  
Fully Integrated ◽  
Front End

Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission

2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  
Keyword(s):  
Data Transmission ◽  
Intermediate Frequency ◽  
Phase Locked Loop ◽  
Data Rate ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Integrated ◽  
Front End ◽  
Free Data ◽  
Bicmos Technology

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.

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