Effect of Material Properties of Double-Layer Non Conductive Films (D-NCFs) on the Reflow Reliability of Ultra Fine-Pitch Cu-Pillar/Sn-Ag Micro Bump Interconnection

2017 ◽  
Author(s):  
Seyong Lee ◽  
Jiwon Shin ◽  
Woojeong Kim ◽  
Taejin Choi ◽  
Kyung-Wook Paik
Keyword(s):  
Double Layer ◽  
Material Properties ◽  
Conductive Films ◽  
Cu Pillar ◽  
Fine Pitch

Fine pitch Cu pillar wafer process development and seed layer etching characterization

2012 ◽  
Author(s):  
Li Yan Siow ◽  
Wei Deng ◽  
Qing Xin Zhang ◽  
Tai Chong Chai ◽  
Chee Guan Koh ◽  
...  
Keyword(s):  
Seed Layer ◽  
Process Development ◽  
Cu Pillar ◽  
Fine Pitch

Si Photonics Deployment Using Cu Pillar Interconnect and Chip On Wafer Platform

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 001663-001681
Author(s):  
Miguel Jimarez
Keyword(s):  
Light Source ◽  
Silicon Photonics ◽  
High Speed ◽  
High Sensitivity ◽  
Optical Path ◽  
Clock Recovery ◽  
Wafer Scale ◽  
Si Photonics ◽  
Cu Pillar ◽  
Fine Pitch

We introduce a high-speed 4x25Gbps, MSA-compliant, QSFP transceiver built on a Silicon Photonics platform. The transceiver integrates high sensitivity receivers, CTLE, clock recovery, modulator drivers and BIST on a TSMC 28nm die connected to the photonic die thru a fine pitch (50um) Copper Pillar interface. A wafer-scale approach, Chip on Wafer, CoW, is used to assemble the electronic die and the light source on to the photonic die, so that the full optical path can be tested, at speed, in loopback configuration in wafer form, using a standard ATE solution. This presentation focuses on the CoW assembly development aspects of the transceiver. Wafer probe and bump, die processing services, CoW assembly and Back End of Line, BEOL, Test Services will be presented.

Control of Bump Morphology in Lead Free Solder Plating for Higher Density Packaging

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001643-001669
Author(s):  
Koji Tatsumi ◽  
Kyouhei Mineo ◽  
Takeshi Hatta ◽  
Takuma Katase ◽  
Masayuki Ishikawa ◽  
...  
Keyword(s):  
High Speed ◽  
Flip Chip ◽  
New Technologies ◽  
Short Circuit ◽  
Lead Free Solder ◽  
Cu Pillar ◽  
Fine Pitch ◽  
Different Shapes ◽  
Free Solder ◽  
High Density Packaging

Solder bumping is one of the key technologies for flip chip connection. Flip chip connection has been moving forward to its further downsizing and higher integration with new technologies, such as Cu pillar, micro bump and Through Silicon Via (TSV). Unlike some methods like solder printing and ball mounting, electroplating is a very promising technology for upcoming finer bump formation. We have been developing SnAg plating chemical while taking technology progress and customers' needs into consideration at the same time. Today, we see more variety of requests including for high speed plating to increase the productivity and also for high density packaging such as narrowing the bump pitch itself and downsizing of the bump diameter. To meet these technical needs, some adjustments of plating chemical will be necessary. This time we developed new plating chemicals to correspond to bump miniaturization. For instance, our new SnAg chemical can control bump morphology while maintaining the high deposition speed. With our new plating chemicals, we can deposit mushroom bumps that grow vertically against the resist surface, also this new chemicals work effectively to prevent short-circuit between mushroom bumps with fine pitch from forming. In addition, we succeeded in developing high speed Cu pillar plating chemicals that can control the surface morphology to create different shapes. We'd like to present our updates on controlling bump morphology for various applications.

Packaging Materials for 2.5/3D Technology

2013 ◽  
Vol 2013 (1) ◽  
pp. 000276-000284 ◽  
Author(s):  
Brian Schmaltz
Keyword(s):  
High Reliability ◽  
Low Cost ◽  
High Yield ◽  
Wafer Level ◽  
Reflow Process ◽  
Thermal Compression ◽  
Conductive Films ◽  
Cu Pillar ◽  
Advanced Packaging ◽  
Capillary Underfill

The age of advanced mobile devices is on the direct horizon, are we ready for it? Less power consumption, faster processing, high reliability, high yield, low cost are words engineers are all too familiar with. 2.5/3D utilizing interposer technology, Thru Silicon Via (TSV), sub-50μm die thickness are a few of the latest techniques engineers use to solve these issues. As technology progresses to smaller process generations, new packaging applications are being demanded. The standard solder reflow process is being pushed by advancements in Cu pillar bumps, thermal compression bonding (TCB) and wafer level / pre-applied materials. This presentation will centralize around the latest advancements in NAMICS Materials for Advanced Packaging Technology; Capillary Underfill (CUF), Pre-Applied Material, Non-Conductive Paste (NCP), Non-Conductive Films (NCF).

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