Design and Fabrication of Silver Solid Solution Layer on Silicon and Its Solid-State Bonding Applications

Author(s):  
Yi-Ling Chen ◽  
Yongjun Huo ◽  
Chin C. Lee
Vacuum ◽  
2020 ◽  
Vol 172 ◽  
pp. 109078 ◽  
Author(s):  
Zhimin Ding ◽  
Zhiwen Li ◽  
Hongjuan Li ◽  
Ying Chen

2019 ◽  
Vol 944 ◽  
pp. 176-181
Author(s):  
Yao Hu ◽  
Jun Tao He ◽  
Yu Cai Wu ◽  
Yong Dong ◽  
Zheng Rong Zhang

In this paper, we studied the element diffusion behaviors of the multi-principal CoCrFeNi high entropy alloy in molten Al at 700°C. Microstructure, structure and microhardness in the diffusion interfaces of CoCrFeNi and Al are studied by the X-ray diffraction, the scanning electron microscopy, the energy spectrometry, and the microhardness tester. The results showed that a complex chemical reaction occurred at the interface between the high-entropy alloy and the Al. A mixture of FCC + BCC solid solution layer was first formed. Then a bulk Al13Cr2 compound formed near the Al of the solid solution layer. With the increase of dipping time, the thickness of the solid solution layer remained unchanged, and the compounds gradually changed into spheres distributed in the Al matrix. The formation of BCC structure makes the hardness of the solid solution layer up to 450HV, and the existence of the compound also increases the hardness of the Al matrix significantly.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
L. J. Fan ◽  
Y. B. Zhong ◽  
Y. L. Xu ◽  
T. X. Zheng ◽  
Z. Shen ◽  
...  

AbstractDiffusion behavior of newly designed Fe2.7wt.%Si-Fe10wt.%Si couples at 1100 °C for up to 12 h has been investigated under the 0, 0.8 and 3 T magnetic fields. Diffusion thickness of solid solution layer and weight percent of Si on Fe2.7wt.%Si side increase significantly under a magnetic field. Application of a magnetic field promotes the diffusion of solid solution layer through the possible diffusion of vacancies mainly due to the appearance of defects, which has been demonstrated by the increased dislocation density and broadening of the typical XRD peaks. Replacement of Si sits by Fe atoms in the crystal structure leads to the appearance of Fe diffraction peaks, which has been confirmed by the increased interplanar spacings under a magnetic field. The magnetic field benefits the depinning of dislocations and leads to higher dislocation density because of the magnetoplastic effect which has been confirmed by the significantly reduced thickness of Fe2.7wt.%Si. Nano-sized Fe3Si particles precipitate in the matrix with an orientation relationship on Fe10wt.%Si side as {220}Fe3Si || {220}matrix & < 1–10 >Fe3Si || < 1–10 >matrix. Fe3Si particles pin dislocation moving and lead to higher dislocation density.


2021 ◽  
Vol 2 (1) ◽  
pp. 39-48
Author(s):  
Nguyen H. H. Phuc ◽  
Takaki Maeda ◽  
Tokoharu Yamamoto ◽  
Hiroyuki Muto ◽  
Atsunori Matsuda

A solid solution of a 100Li3PS4·xLi3PO4 solid electrolyte was easily prepared by liquid-phase synthesis. Instead of the conventional solid-state synthesis methods, ethyl propionate was used as the reaction medium. The initial stage of the reaction among Li2S, P2S5 and Li3PO4 was proved by ultraviolet-visible spectroscopy. The powder X-ray diffraction (XRD) results showed that the solid solution was formed up to x = 6. At x = 20, XRD peaks of Li3PO4 were detected in the prepared sample after heat treatment at 170 °C. However, the samples obtained at room temperature showed no evidence of Li3PO4 remaining for x = 20. Solid phosphorus-31 magic angle spinning nuclear magnetic resonance spectroscopy results proved the formation of a POS33− unit in the sample with x = 6. Improvements of ionic conductivity at room temperature and activation energy were obtained with the formation of the solid solution. The sample with x = 6 exhibited a better stability against Li metal than that with x = 0. The all-solid-state half-cell employing the sample with x = 6 at the positive electrode exhibited a better charge–discharge capacity than that employing the sample with x = 0.


2021 ◽  
Vol 67 ◽  
pp. 35-45
Author(s):  
Shuangjie Zhang ◽  
Wei Wang ◽  
Shibo Ma ◽  
Qiang Li

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