Reduced graphene oxide based Schottky diode on flex substrate for microwave circuit applications

2013 ◽  
Author(s):  
Amanpreet Kaur ◽  
Xianbo Yang ◽  
Kyoung Youl Park ◽  
Premjeet Chahal
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Schottky Diode ◽  
Microwave Circuit ◽  
Reduced Graphene

Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector

2016 ◽  
Vol 119 (12) ◽  
pp. 124303 ◽  
Author(s):  
Miao Zhu ◽  
Xinming Li ◽  
Xiao Li ◽  
Xiaobei Zang ◽  
Zhen Zhen ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Schottky Diode ◽  
High Sensitivity ◽  
Reduced Graphene

Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes

2018 ◽  
Vol 196 ◽  
pp. 32-37 ◽  
Author(s):  
Siti Nadiah Che Azmi ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan ◽  
Abdul Manaf Hashim
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Schottky Diode ◽  
Reduced Graphene

Photo-induced selective gas detection based on reduced graphene oxide/Si Schottky diode

Carbon ◽  
2015 ◽  
Vol 84 ◽  
pp. 138-145 ◽  
Author(s):  
Miao Zhu ◽  
Xinming Li ◽  
Sunki Chung ◽  
Liyun Zhao ◽  
Xiao Li ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Schottky Diode ◽  
Gas Detection ◽  
Reduced Graphene

scholarly journals Back-to-Back Schottky Diode from Vacuum Filtered and Chemically Reduced Graphene Oxide

2018 ◽  
Vol 10 (3) ◽  
pp. 897
Author(s):  
Siti Nadiah Che Azmi ◽  
Shaharin Fadzli Abd Rahman ◽  
Abdul Manaf Hashim
Keyword(s):  
Ascorbic Acid ◽  
Graphene Oxide ◽  
Film Thickness ◽  
Reduced Graphene Oxide ◽  
Schottky Diode ◽  
Chemical Reduction ◽  
Process Condition ◽  
Reduction Process ◽  
Simple Method ◽  
Reduced Graphene

<span>This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reduction process, long duration was required to produce higher reduction degree. rGO film that underwent two times reduction at before and after transfer process with concentrated ascorbic acid gave the lowest sheet resistance of 3.58 MΩ/sq. In the final part of the paper, result of the BBSD device fabrication and current-voltage characterization were shown. The formed two rGO/Si Schottky junctions in the BBSD gave barrier height of 0.63 and 0.7 eV. The presented results confirmed the viability of fabricating rGO-based device using a simple method and without requirement of sophisticated equipment.</span>

scholarly journals Study of Reduced Graphene Oxide for Trench Schottky Diode

2015 ◽  
Vol 99 ◽  
pp. 012031 ◽  
Author(s):  
Nur Samihah Khairir ◽  
Mohd Rofei Mat Hussin ◽  
Iskhandar Md Nasir ◽  
A S M Mukhter Uz-Zaman ◽  
Wan Fazlida Hanim Abdullah ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Schottky Diode ◽  
Reduced Graphene

High Toughness Inorganic Solid Electrolytes via the Use of Reduced Graphene-Oxide

2020 ◽  
Author(s):  
Christos E. Athanasiou ◽  
Mok Yun Jin ◽  
Cristina Ramirez ◽  
Nitin P. Padture ◽  
Brian W. Sheldon
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Solid Electrolytes ◽  
High Toughness ◽  
Reduced Graphene
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