Development of highly reliable flip-chip bonding technology using non-conductive adhesives (NCAs) for 20 μm pitch application

2013 ◽  
Author(s):  
Sun-Chul Kim ◽  
Myung-Hwan Hong ◽  
Ji-Hyun Lee ◽  
Young-Ho Kim
Keyword(s):  
Flip Chip ◽  
Conductive Adhesives ◽  
Flip Chip Bonding ◽  
Bonding Technology

Low Temperature flip chip bonding technology applicable to flexible hybrid electronics in the IoT era

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 000474-000518
Author(s):  
Hiroshi Komatsu
Keyword(s):  
Screen Printing ◽  
Flip Chip ◽  
Bonding Temperature ◽  
Complex Form ◽  
Fine Tuning ◽  
Electric Resistance ◽  
Flip Chip Bonding ◽  
Strong Adhesion ◽  
Bonding Technology ◽  
Ag Paste

Since its early days of the industry, electronics apparatus has been in a rigid and flat surfaced case. ICs have been soldered on rigid substrate at high bonding temperature. However, in the IoT era, electronics components connect with the variety of applications which require different forms and shapes of outlook which lead substrate and board should be flexible and complex form. Conventional flip chip bonding technology, such as solder bump and copper pillar, need to raise bonding temperature around 260-degree C, eventually does not satisfy this flexile hybrid electronics (FHE) application requirement. We have originally developed flip chip bonding technology which consists of the bump formation by Conductive Paste (CP) printing followed by Non-Conductive Paste (NCP) dispensing and flip chip bonding at temperature as low as 120-degree C. Bumps with silver particle loaded epoxy resin on substrate were formed by screen printing. This enable us to make fine bump formation down to 60um minimum bump pitch and 30um bump diameter with tuning of screen-printing process. After the bump formation, NCP dispensing and flip chip bonding at 120-degree C which secure reasonable low electric resistance, 8×1E-4 ohm cm2, and strong adhesion of chip and substrate. The bonding temperature of this technology can be lowered down to 80-degree C without much difficulties, but just by fine tuning of Ag paste and its contents. This momentum will create a lot more of future applications and be one of the core technologies in the coming IoT era in FHE.

Reliability Assessment of Flip-chip Assembly of Al Bumps

2014 ◽  
Vol 2014 (1) ◽  
pp. 000301-000306
Author(s):  
Hidekazu TANISAWA ◽  
Kohei HIYAMA ◽  
Takeshi ANZAI ◽  
Hiroki TAKAHASHI ◽  
Yoshinori MURAKAMI ◽  
...  
Keyword(s):  
High Temperatures ◽  
Flip Chip ◽  
Recrystallization Temperature ◽  
Exposure Test ◽  
Bonding Wire ◽  
Flip Chip Bonding ◽  
Bonding Technology ◽  
A New Technique ◽  
Temperature Exposure ◽  
Surface Mounting

This paper reports on a flip-chip bonding technology using an aluminum bump at high temperatures, such as for SiC semiconductors. In recent years, double-sided mounting structures have been proposed for the purposes of miniaturization and low inductance. The surface mounting method requires durability to withstand high temperatures. We propose a new technique for the flip-chip bonding of an Al bump made from bonding wire. The recrystallization temperature of aluminum is under 250 °C. As a result, there is an expectation of mitigating mechanical stress between the chip and bonded substrate. A high-temperature exposure test at 250 °C for 3000 hours and a thermal-cycle test between −40 and 250 °C for 3000 cycles have been executed. Results indicate that shear strength of the Al bump meets the requirements set forth in the IEC60749-19 guideline until 2000 cycles at room temperature.

New Flip-Chip Bonding Technology for Superconducting IC

1992 ◽  
Vol 31 (Part 2, No.1A/B) ◽  
pp. L36-L38 ◽  
Author(s):  
Toshinori Ogashiwa ◽  
Hiroshi Nakagawa ◽  
Hideyuki Akimoto ◽  
Hiroyuki Shigyo ◽  
Susumu Takada
Keyword(s):  
Flip Chip ◽  
Flip Chip Bonding ◽  
Bonding Technology

A low-phase-noise 76-GHz planar Gunn VCO using flip-chip bonding technology

2005 ◽  
Author(s):  
T. Yoshida ◽  
Y. Fukasawa ◽  
T. Deguchi ◽  
K. Kawaguchi ◽  
T. Sugiyama ◽  
...  
Keyword(s):  
Phase Noise ◽  
Flip Chip ◽  
Flip Chip Bonding ◽  
Bonding Technology ◽  
Low Phase Noise

Reliability evaluation of ultra-thin CSP using new flip-chip bonding technology––double-sided CSP and single-sided CSP

2003 ◽  
Vol 43 (12) ◽  
pp. 2065-2075 ◽  
Author(s):  
Kazuto Nishida ◽  
Kazumichi Shimizu ◽  
Michiro Yoshino ◽  
Hideo Koguchi ◽  
Nipon Taweejun
Keyword(s):  
Flip Chip ◽  
Reliability Evaluation ◽  
Flip Chip Bonding ◽  
Bonding Technology

scholarly journals High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology

2012 ◽  
Vol 20 (27) ◽  
pp. 28057 ◽  
Author(s):  
Shinsuke Tanaka ◽  
Seok-Hwan Jeong ◽  
Shigeaki Sekiguchi ◽  
Teruo Kurahashi ◽  
Yu Tanaka ◽  
...  
Keyword(s):  
Output Power ◽  
Flip Chip ◽  
High Output Power ◽  
Flip Chip Bonding ◽  
Bonding Technology ◽  
High Output

Reliability Assessment of Flip-Chip Assembly of Al Bumps

2015 ◽  
Vol 12 (2) ◽  
pp. 92-97 ◽  
Author(s):  
Hidekazu Tanisawa ◽  
Kohei Hiyama ◽  
Takeshi Anzai ◽  
Hiroki Takahashi ◽  
Yoshinori Murakami ◽  
...  
Keyword(s):  
High Temperatures ◽  
Flip Chip ◽  
Recrystallization Temperature ◽  
Thermal Shock Test ◽  
Bonding Wire ◽  
Flip Chip Bonding ◽  
Aging Test ◽  
Bonding Technology ◽  
A New Technique ◽  
Surface Mounting

This article reports on a flip-chip bonding technology using an Al bump at high temperatures, such as for SiC semiconductors. In recent years, double-sided mounting structures have been proposed for purposes of miniaturization and low inductance. The surface-mounting method requires durability against high temperatures. We propose a new technique for the flip-chip bonding of an Al bump made from bonding wire. The recrystallization temperature of Al is under 250°C. As a result, there is an expectation of mitigating mechanical stress between the chip and the bonded substrate. We conducted a high-temperature aging test at 250°C for 3,000 h and a thermal shock test between −40°C and 250°C for 3,000 cycles. Results indicate that the shear strength of the Al bump meets the requirements specified in the IEC60749-19 guideline up to 2,000 cycles at room temperature.

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