The effects of Cu doping in eutectic PbSn solder balls on ENIG substrates

2005 ◽  
Author(s):  
M. Nguyen
Keyword(s):  
Cu Doping ◽  
Solder Balls ◽  
Pbsn Solder

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Time Domain Reflectometry Technique for Failure Analysis

2004 ◽  
Author(s):  
Teoh King Long ◽  
Ko Yin Fern
Keyword(s):  
Failure Analysis ◽  
Time Domain ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Reference Plane ◽  
First Case ◽  
Main Emphasis ◽  
Plastic Ball ◽  
Solder Balls ◽  
Non Destructive

Abstract In time domain reflectometry (TDR), the main emphasis lies on the reflected waveform. Poor probing contact is one of the common problems in getting an accurate waveform. TDR probe normalization is essential before measuring any TDR waveforms. The advantages of normalization include removal of test setup errors in the original test pulse and the establishment of a measurement reference plane. This article presents two case histories. The first case is about a Plastic Ball Grid Array package consisting of 352 solder balls where the open failure mode was encountered at various terminals after reliability assessment. In the second, a three-digit display LED suspected of an electrical short failure was analyzed using TDR as a fault isolation tool. TDR has been successfully used to perform non-destructive fault isolation in assisting the routine failure analysis of open and short failure. It is shown to be accurate and reduces the time needed to identify fault locations.

Based on the technology of electromagnetic force driving and differential pressure control for producing solder balls

2021 ◽  
Vol 286 ◽  
pp. 129236
Author(s):  
Tongju Wang ◽  
Yongping Lei ◽  
Peng Zhao ◽  
Jian Lin ◽  
Hanguang Fu
Keyword(s):  
Electromagnetic Force ◽  
Pressure Control ◽  
Differential Pressure ◽  
Solder Balls

Synergy between Cu doping and catalytic platform in 2D Ni-MOFs/Cu-Zn0.5Cd0.5S for efficient water-to-hydrogen conversion

2021 ◽  
Vol 410 ◽  
pp. 128316
Author(s):  
Chunxue Li ◽  
Xiaoteng Liu ◽  
Yongsheng Yan ◽  
Xianghai Song ◽  
Yan Yan ◽  
...  
Keyword(s):  
Cu Doping

scholarly journals Correction: Influence of Cu doping on the visible-light-induced photocatalytic activity of InVO4

RSC Advances ◽  
2020 ◽  
Vol 10 (62) ◽  
pp. 37766-37767
Author(s):  
Natda Wetchakun ◽  
Pimonrat Wanwaen ◽  
Sukon Phanichphant ◽  
Khatcharin Wetchakun
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Cu Doping

Correction for ‘Influence of Cu doping on the visible-light-induced photocatalytic activity of InVO4’ by Natda Wetchakun et al., RSC Adv., 2017, 7, 13911–13918, DOI: 10.1039/C6RA27138C.

Zn diffusion and reflow behaviour of Sn-9Zn and Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga solders on a Ni/Cu substrate under IR reflow

2014 ◽  
Vol 26 (2) ◽  
pp. 87-95 ◽  
Author(s):  
J. Mittal ◽  
K.L. Lin
Keyword(s):  
Theoretical Calculations ◽  
Research Work ◽  
Content Type ◽  
Diffusion Behavior ◽  
Zn Diffusion ◽  
Cu Substrate ◽  
Practical Applications ◽  
Substrate Interface ◽  
Solder Balls ◽  
Practical Implications

Purpose – This paper aims to compare the reflow and Zn diffusion behaviors in Sn-Zn and Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga (5E) solders during soldering on a Ni/Cu substrate under infrared (IR) reflow. The study proposes a model on the effect of various elements particularly Zn diffusion behavior in the solders on the formation of intermetallic compounds (IMCs). Design/methodology/approach – The melting activities of two solders near their melting points on copper substrates are visualized in an IR reflow furnace. Reflowed solder joints were analyzed using scanning electron microscope and energy dispersive X-ray spectroscopy. Findings – Reflow behaviors of the solders are similar. During melting, solder balls are first merged into each other and then reflow on the substrate from top to bottom. Both solders show a reduced amount of Zn in the solder. Theoretical calculations demonstrate a higher Zn diffusion in the 5E solder; however, the amount of Zn actually observed at the solder/substrate interface is lower than Sn-9Zn solder due to the formation of ZnAg3 in the solder. A thinner IMC layer is formed at the interface in the 5E solder than the Sn-Zn solder. Research limitations/implications – The present work compares the 5E solder only with Sn-Zn solder. Additional research work may be required to compare 5E solder with other solders like Sn-Ag, SnAgCu, etc. to further establish its practical applications. Practical implications – The study ascertains the advantages of 5E solder over Sn-Zn solder for all practical applications. Originality/value – The significance of this paper is the understanding of the relation between reflow behavior of solders and reactivity of different elements in the solder alloys and substrate to form various IMCs and their influence on the formation of IMC layer at solder/substrate interface. Emphasis is provided for the diffusion behavior of Zn during reflow and respective reaction mechanisms.

Transition Insulator-Metal and Antiferromagnetic-Paramagnetic Cu Doped in La0.47Ca0.53MnO3

2015 ◽  
Vol 1123 ◽  
pp. 73-77 ◽  
Author(s):  
Yohanes Edi Gunanto ◽  
K. Sinaga ◽  
B. Kurniawan ◽  
S. Poertadji ◽  
H. Tanaka ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Magnetic Structure ◽  
Room Temperature ◽  
Paramagnetic Phase ◽  
Perovskite Manganites ◽  
Antiferromagnetic Phase ◽  
Temperature Transition ◽  
Cu Doping ◽  
Metal State

The study of the perovskite manganites La0.47Ca0.53Mn1-xCuxO3 with x = 0, 0.06, 0.09, and 0.13 has been done. The magnetic structure was determined using high-resolution neutron scattering at room temperature and low temperature. All samples were paramagnetic at room temperature and antiferromagnetic at low temperature. Using the SQUID Quantum Design, the samples showed that the doping of the insulating antiferromagnetic phase La0.47Ca0.53MnO3 with Cu doping resulted in the temperature transition from an insulator to metal state, and an antiferromagnetic to paramagnetic phase. The temperature transition from an insulator to metal state ranged from 23 to 100 K and from 200 to 230 K for the transition from an antiferromagnetic to paramagnetic phase.

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