Thin film coolers for localized temperature control in optoelectronic integrated circuits

2004 ◽  
Author(s):  
Yan Zhang ◽  
J. Christofferson ◽  
D. Vashaec ◽  
P. Nguven ◽  
A. Shakouri
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Temperature Control ◽  
Optoelectronic Integrated Circuits

Thin-film multimaterial optoelectronic integrated circuits

1996 ◽  
Vol 19 (1) ◽  
pp. 97-106 ◽  
Author(s):  
N.M. Jokerst ◽  
M.A. Brooke ◽  
O. Vendier ◽  
S. Wilkinson ◽  
S. Fike ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Optoelectronic Integrated Circuits

Optical-reconfigurable carbon nanotube and indium-tin-oxide complementary thin-film transistor logic gates

Nanoscale ◽  
2018 ◽  
Vol 10 (27) ◽  
pp. 13122-13129 ◽  
Author(s):  
Jianping Zou ◽  
Kang Zhang ◽  
Weifan Cai ◽  
Tupei Chen ◽  
Arokia Nathan ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Integrated Circuits ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistor ◽  
Logic Gates ◽  
Reconfigurable Logic ◽  
Optoelectronic Integrated Circuits ◽  
Logic Operations

Optical reconfigurable logic operations using hybrid integrated CNT/ITO-TFT logic gates provide the potential to construct optoelectronic integrated circuits with diversified functions.

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Complementary transistor technology for use in optoelectronic integrated circuits

1993 ◽  
Vol 140 (4) ◽  
pp. 279
Author(s):  
P.A. Kiely ◽  
G.W. Taylor ◽  
D.P. Docter ◽  
P.A. Evaldsson ◽  
T.A. Vang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Optoelectronic Integrated Circuits

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals In-Plane Detection of Guided Surface Plasmons for High-Speed Optoelectronic Integrated Circuits

2017 ◽  
Vol 3 (1) ◽  
pp. 1700196 ◽  
Author(s):  
Evgeniy Panchenko ◽  
Jasper J. Cadusch ◽  
Ori Avayu ◽  
Tal Ellenbogen ◽  
Timothy D. James ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Surface Plasmons ◽  
High Speed ◽  
Optoelectronic Integrated Circuits
Sign in / Sign up

Export Citation Format

Share Document