UbBM (under bump metallization) study for Pb-free electroplating bumping : interface reaction and electromigration

2005 ◽  
Author(s):  
Se-Young Jang ◽  
J. Wolf ◽  
Woon-Seong Kwon ◽  
Kyung-Wook Paik
Keyword(s):  
Interface Reaction ◽  
Under Bump Metallization

scholarly journals Artificial dual solid-electrolyte interfaces based on in situ organothiol transformation in lithium sulfur battery

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Wei Guo ◽  
Wanying Zhang ◽  
Yubing Si ◽  
Donghai Wang ◽  
Yongzhu Fu ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Interface Reaction ◽  
Interfacial Instability ◽  
Anode Surface ◽  
Commercial Application ◽  
Lithium Metal ◽  
Metal Anode ◽  
Lithium Metal Anode ◽  
Lithium Sulfur

AbstractThe interfacial instability of the lithium-metal anode and shuttling of lithium polysulfides in lithium-sulfur (Li-S) batteries hinder the commercial application. Herein, we report a bifunctional electrolyte additive, i.e., 1,3,5-benzenetrithiol (BTT), which is used to construct solid-electrolyte interfaces (SEIs) on both electrodes from in situ organothiol transformation. BTT reacts with lithium metal to form lithium 1,3,5-benzenetrithiolate depositing on the anode surface, enabling reversible lithium deposition/stripping. BTT also reacts with sulfur to form an oligomer/polymer SEI covering the cathode surface, reducing the dissolution and shuttling of lithium polysulfides. The Li–S cell with BTT delivers a specific discharge capacity of 1,239 mAh g−1 (based on sulfur), and high cycling stability of over 300 cycles at 1C rate. A Li–S pouch cell with BTT is also evaluated to prove the concept. This study constructs an ingenious interface reaction based on bond chemistry, aiming to solve the inherent problems of Li–S batteries.

scholarly journals Langmuir Adsorption Kinetics in Liquid Media: Interface Reaction Model

ACS Omega ◽  
2021 ◽  
Author(s):  
Md Akhtarul Islam ◽  
Myisha Ahmed Chowdhury ◽  
Md. Salatul Islam Mozumder ◽  
Md. Tamez Uddin
Keyword(s):  
Adsorption Kinetics ◽  
Interface Reaction ◽  
Reaction Model ◽  
Liquid Media ◽  
Langmuir Adsorption

scholarly journals Effect of Intermetallic Compound Bridging on the Cracking Resistance of Sn2.3Ag Microbumps with Different UBM Structures under Thermal Cycling

Metals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1065
Author(s):  
Chun-Chieh Mo ◽  
Dinh-Phuc Tran ◽  
Jing-Ye Juang ◽  
Chih Chen
Keyword(s):  
Electron Microscope ◽  
Intermetallic Compound ◽  
Thermal Cycling ◽  
Thermal Cycle ◽  
Crack Formation ◽  
Thermal Cycling Test ◽  
Under Bump Metallization ◽  
Reflow Time ◽  
Cracking Resistance ◽  
Scanning Electron

In this study, the effect of intermetallic compound (IMC) bridging on the cracking resistance of microbumps with two different under bump metallization (UBM) systems, Cu/solder/Cu and Cu/solder/Ni, under a thermal cycling test (TCT) is investigated. The height of the Sn2.3Ag solders was ~10 µm, which resembles that of the most commonly used microbumps. We adjusted the reflow time to control the IMC bridging level. The samples with different bridging levels were tested under a TCT (−55–125 °C). After 1000 and 2000 TCT cycles (30 min/cycle), the samples were then polished and characterized using a scanning electron microscope (SEM). Before IMC bridging, various cracks in both systems were observed at the IMC/solder interfaces after the 1000-cycle tests. The cracks propagated as cyclic shapes from the sides to the center and became more severe as the thermal cycle was increased. With IMC bridging, we could not observe any further failure in all the samples even when the thermal cycle was up to 2000. We discovered that IMC bridging effectively suppressed crack formation in microbumps under TCTs.

scholarly journals Interface Behavior of Brazing between Zr-Cu Filler Metal and SiC Ceramic

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 727
Author(s):  
Bofang Zhou ◽  
Taohua Li ◽  
Hongxia Zhang ◽  
Junliang Hou
Keyword(s):  
Interfacial Reaction ◽  
Reaction Layer ◽  
Chemical Potential ◽  
Filler Metal ◽  
Diffusion Constant ◽  
Interface Reaction ◽  
Diffusion Path ◽  
Interface Behavior ◽  
Interfacial Reaction Layer ◽  
Sic Ceramic

The interface behavior of brazing between Zr-Cu filler metal and SiC ceramic was investigated. Based on the brazing experiment, the formation of brazing interface products was analyzed using OM, SEM, XRD and other methods. The stable chemical potential phase diagram was established to analyze the possible diffusion path of interface elements, and then the growth behavior of the interface reaction layer was studied by establishing relevant models. The results show that the interface reaction between the active element Zr and SiC ceramic is the main reason in the brazing process the interface products are mainly ZrC and Zr2Si and the possible diffusion path of elements in the product formation process is explained. The kinetic equation of interfacial reaction layer growth is established, and the diffusion constant (2.1479 μm·s1/2) and activation energy (42.65 kJ·mol−1) are obtained. The growth kinetics equation of interfacial reaction layer thickness with holding time at different brazing temperatures is obtained.

Oxidation of silicon: Is there a slow interface reaction?

1989 ◽  
Vol 66 (9) ◽  
pp. 4441-4443 ◽  
Author(s):  
Robert H. Doremus
Keyword(s):  
Interface Reaction

Composition and Structure of Epitaxial CaF2 Layers at the First Stages of Their Growth on Si(111)

2001 ◽  
Vol 696 ◽  
Author(s):  
R. Würz ◽  
W. Bohne ◽  
W. Fuhs ◽  
J. Röhrich ◽  
M. Schmidt ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Stoichiometric Composition ◽  
Interface Reaction ◽  
Heavy Ion ◽  
Interface Layer ◽  
Buffer Layers ◽  
Ex Situ ◽  
Elastic Recoil ◽  
Detection Analysis

AbstractCaF2 films with thicknesses in the monolayer range (<20 Å) were grown on Si(111) by evaporation from a CaF2 source at UHV conditions. They were characterized ex-situ by Heavy-Ion Elastic Recoil Detection Analysis (HI-ERDA), RBS/Channeling, X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM). The F/Ca ratio of the films was found to depend on the growth temperature Ts and to deviate appreciably from the stoichiometric composition (F/Ca=2). Due to an interface reaction which leads to a CaF-interface layer a change from polycrystalline to epitaxial growth occurs at Ts=450°C. At higher temperature film growth started with a closed layer of CaF on top of which CaF2 layers with an increasing fraction of pinholes were formed. By means of a two-step process at different temperatures, the amount of pinholes could be strongly reduced. It was found, that buffer layers of CaF2 with a CaF interface layer introduced in Au/p-Si contacts enhance the barrier height by as much as 0.36eV to values of 0.64eV.

Effect of Coating on the Thermal Conductivities of Diamond/Cu Composites Prepared by Spark Plasma Sintering (SPS)

2014 ◽  
Vol 722 ◽  
pp. 25-29 ◽  
Author(s):  
Q.L. Che ◽  
X.K. Chen ◽  
Y.Q. Ji ◽  
Y.W. Li ◽  
L.X. Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Properties ◽  
Theoretical Prediction ◽  
Volume Fraction ◽  
Interface Reaction ◽  
Copper Matrix ◽  
Bonding Force ◽  
Ti Alloys ◽  
Plasma Sintering ◽  
Spark Plasma

The carbide forming is proposed to improve interfacial bonding between diamond particles and copper-matrix for diamond/copper composites. The volume fraction of diamond and minor titanium are optimized. The microstructures, thermal properties, interface reaction production and its effect of minor titanium on the properties of the composites are investigated. The results show that the bonding force and thermal conductivity of the diamond/Cu-Ti alloys composites is much weaker and lower than that of the coated-diamond/Cu. the thermal conductivity of coated-60 vol. % diamond/Cu composites is 618 W/m K which is 80 % of the theoretical prediction value. The high thermal conductivity has been achieved by forming the titanium carbide at diamond/copper interface to gain a good interface.

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