Integration of thin film passive circuits using high/low dielectric constant materials

2002 ◽  
Author(s):  
P. Chahal ◽  
A. Haridass ◽  
A. Pham ◽  
R.R. Tummala ◽  
M.G. Allen ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Passive Circuits ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

Thin Polytetrafluoroethylene Organosilane Nanocomposite Films Used as Ultra Low Dielectric Constant Materials in Microelectronics

1999 ◽  
Vol 581 ◽  
Author(s):  
Shichun Qu ◽  
Tom Rosenmayer ◽  
Ping Xu ◽  
Perry Spevack
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Interfacial Properties ◽  
Inorganic Materials ◽  
Nanocomposite Material ◽  
Low Dielectric Constant ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

ABSTRACTReplacing the current on-chip dielectric materials such as silicon dioxide, which has a dielectric constant of approximately 4.0, with low dielectric constant materials can greatly improve the performance of high density VLSI device by reducing crosstalk and capacitive delay. Polytetrafluoroethylene (PTFE) has the lowest dielectric constant (k < 2.0) of any full density material, which makes it a promising candidate for this IC application. Pure PTFE thin films cast from PTFE nanoemulsion containing sub-20nm PTFE particles, though thermally stable, have some inherent sub-optimal properties. These include adhesion to other inorganic materials and mechanical strength at high processing temperatures. In order to improve these properties, we have developed a PTFE / silicon compound nanocomposite material. Initial tests have shown that this nanocomposite material has significantly improved high temperature mechanical properties and interfacial properties between the composite and inorganic materials such as silicon, silicon oxide, silicon nitride and some metals. The surface roughness of the thin film coatings is also reduced compared to pure PTFE thin film coatings. The coatings require no separate adhesion promoter to be applied to the substrate prior to deposition. Characterization work has been carried out with different techniques such as DMA, ToF-SIMS, XPS and AFM with hydrofluoric acid (HF) selective etching, in order to understand this novel nanocomposite and its surface and interfacial properties.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

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