Sol-gel processing of porous silica thin films for interlevel dielectrics in integrated circuits

2002 ◽  
Author(s):  
J.R. Kokan ◽  
F. Tadayon ◽  
R. Gerhardt ◽  
P.A. Kohl
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Sol Gel ◽  
Porous Silica ◽  
Silica Thin Films ◽  
Gel Processing

Humidity Effects on Porous Silica Thin Films

1995 ◽  
Vol 411 ◽  
Author(s):  
J. R. Kokan ◽  
R. A. Gerhardt
Keyword(s):  
Thin Films ◽  
Ac Conductivity ◽  
Sol Gel ◽  
Porous Silica ◽  
Controlled Environment ◽  
Alkali Ions ◽  
Humidity Effects ◽  
Silica Thin Films ◽  
Environment Chamber ◽  
Humidity Sensitivity

ABSTRACTImpedance Spectroscopy is being used to study the humidity sensitivity of porous silica thin films. The films are processed via a colloidal sol-gel method which leaves some remnant potassium and sodium. Previous work on bulk porous silica samples processed by the same method showed that the dielectric properties and ac conductivity were very sensitive to changes in humidity. The aim of this work was to determine if the same dependencies could be found in the thin films. The capacitance, dielectric loss, and ac conductivity of the films were measured in a controlled environment chamber from 20–80% RH for frequencies ranging from 10Hz–10MHz. In addition to characterizing films with varying amounts of residual alkali ions obtained through leaching, we have also measured films that were surface doped with controlled amounts of KCl, LiCl, or NaCl. Relative humidity dependencies in the films are not as dramatic as in the bulk samples. The reasons for this behavior are not yet clear, but may be associated with the porosity, thickness, and surface area of the films.

Sol‐Gel Processing and Characterization of Silica Thin Films for on Chip Humidity Sensors

1996 ◽  
Vol 446 ◽  
Author(s):  
J.R. Kokan ◽  
R.A. Gerhardt
Keyword(s):  
Thin Films ◽  
Colloidal Silica ◽  
Sol Gel ◽  
High Sensitivity ◽  
Silica Thin Films ◽  
Highly Sensitive ◽  
On Chip ◽  
Gel Processing ◽  
Highly Porous

AbstractSilica thin films have been processed via a colloidal sol‐gel method which involves the hydrolyzing of potassium silicate and colloidal silica sol using formamide[l]. The resulting films are highly porous. The processing leaves residual potassium and sodium in the films which can then be removed through leaching in water. The dielectric properties of films which have been leached for twenty minutes are nearly insensitive to humidity. However, partially leached films, or films which have been doped with LiCl, KC1, or NaCl, are highly sensitive to humidity changes. The range of humidities over which these films have high sensitivity can be modified by changing the dopant type or varying the doping level. Films can be made to sense humidities ranging from 20% to 80% reproducibly. These films are ideal for microelectronic applications because they can be processed via dipping as well as spin coating and can also be easily etched.

scholarly journals Hydrophobic silica thin films by sol-gel processing and spin coating technique at low temperature

2014 ◽  
Vol 8 (1) ◽  
Author(s):  
Nurul Huda Abu Bakar ◽  
Karim Deraman ◽  
R. Hussin ◽  
W. Nurulhuda W. Shamsuri ◽  
Faizal Mansor ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Spin Coating ◽  
Sol Gel ◽  
Contact Angles ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Hydrophobic Silica ◽  
Silica Thin Films ◽  
Gel Processing

Hydrophobic silica thin films were prepared by sol-gel processing and self-assembly by chemical vapor reaction with Trimethylchlorosilane (TMCS) at low temperature. The sols were divided into Sol A with ethanol, Polyethylene glycol (PEG) and water (H2O) while Sol B were contain precursor of silica Tetraethylorthosilicate (TEOS) hydrolyze with ethanol which was stirred for 15 minutes. HCl was added into the mixture and stirred for another 10 minutes. After deposition on 1 x 1 cm corning glass using spin coating technique (two-step timer), the films were heated at 60˚C for 10 minutes and finally annealed at 150°C for 1 hour. The films were characterized by using Rudolph/Auto EL Ellipsometer, Shimadzu Spectrophotometer, Perkin Elmer Fourier Transform Infrared (FTIR) and Atomic Force Microscope (AFM). The results showed that the films thickness and refractive index were in the range of 105.2 to 112.4 nm and 1.35 to 1.38, respectively. The films were transmitted 70-80% of light (in visible range) with various bondings of C-H, Si-O-Si, Si-C and Si-OH. Surface roughness of the films was increased from 30.6 nm (silica thin film) to 140.5 nm (hydrophobic silica thin films) after modification have been done on the films by using TMCS (heated at 40˚C). It was found that the water contact angles increased when time of reaction increased from 109° to 124°.

Structure and electrical properties of CuAlO2 thin films derived by sol–gel processing

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Processing

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Submicrometric gratings fabrication from photosensitive organo-silica-hafnia thin films elaborated by sol–gel processing

2012 ◽  
Vol 520 (19) ◽  
pp. 6050-6056 ◽  
Author(s):  
Janyce Franc ◽  
Vincent Barnier ◽  
Francis Vocanson ◽  
Emilie Gamet ◽  
Maryline Lesage ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing
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