A high power-density and high efficiency insulated metal substrate based GaN HEMT power module

2017 ◽  
Author(s):  
Juncheng Lucas Lu ◽  
Di Chen ◽  
Lyubov Yushyna
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Metal Substrate ◽  
High Power Density ◽  
Power Module ◽  
Gan Hemt

scholarly journals Comparison of SiC MOSFET‐based and GaN HEMT‐based high‐efficiency high‐power‐density 7.2 kW EV battery chargers

2018 ◽  
Vol 11 (11) ◽  
pp. 1849-1857 ◽  
Author(s):  
Allan Taylor ◽  
Juncheng Lu ◽  
Liyan Zhu ◽  
Kevin (Hua) Bai ◽  
Matt McAmmond ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
High Power Density ◽  
Gan Hemt ◽  
Battery Chargers

Vapor Chamber Acting as a Heat Spreader for Power Module Cooling

2009 ◽  
Vol 1 (2) ◽  
Author(s):  
Y. P. Zhang ◽  
X. L. Yu ◽  
Q. K. Feng ◽  
L. H. Zhang
Keyword(s):  
Power Density ◽  
High Power ◽  
Heat Sink ◽  
Copper Substrate ◽  
Metal Substrate ◽  
Junction Temperature ◽  
High Power Density ◽  
Vapor Chamber ◽  
Power Module ◽  
Heat Spreader

This paper presents an integrated power electronics module with a vapor chamber (VC) acting as a heat spreader to transfer the heat from the insulated gate bipolar transistor (IGBT) module to the base of the heat-sink. The novel VC integrated in a power module instead of a metal substrate is proposed. Compared with a conventional metal heat spreader, the VC significantly diffuses the concentrated heat source to a larger condensing area. The experimental results indicate that the VC based heat-sink will maintain the IGBT junction temperature 20°C cooler than a non-VC based heat-sink with high power density. The junction-to-case thermal resistance of the power module based on the VC is about 50% less than that of the power module based on a copper substrate with the same weight. The chip overshooting temperature of the copper substrate module with the same weight goes beyond 10°C against the junction temperature of the VC module at a given impulse power of 225 W. Consequently, thanks to a longer time duration to reach the same temperature, a power surge for the chip can be avoided and the ability to resist thermal impact during the VC module startup can be improved as well. The investigation shows that the VC power module is an excellent candidate for the original metal substrate, especially for an integrated power module with high power density.

scholarly journals High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

2021 ◽  
Vol 11 (23) ◽  
pp. 11350
Author(s):  
Seyed Abolfazl Mortazavizadeh ◽  
Simone Palazzo ◽  
Arturo Amendola ◽  
Enzo De Santis ◽  
Dario Di Ruzza ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Frequency ◽  
High Efficiency ◽  
Resonant Converters ◽  
Switching Frequency ◽  
High Power Density ◽  
Resonant Converter ◽  
Gan Hemt ◽  
Llc Resonant Converter

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.

scholarly journals Near-field thermophotovoltaics for efficient heat to electricity conversion at high power density

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Near Field ◽  
Electrical Power ◽  
Photovoltaic Cells ◽  
High Power Density ◽  
Pv Cell ◽  
Electrical Power Output ◽  
Power Densities

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.

High-Power-Density High-Efficiency Bottom-Emitting Vertical-Cavity Surface-Emitting Laser Array

2011 ◽  
Vol 4 (5) ◽  
pp. 052104 ◽  
Author(s):  
Di Liu ◽  
Yongqiang Ning ◽  
Yugang Zeng ◽  
Li Qin ◽  
Yun Liu ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Cavity Surface ◽  
High Power Density ◽  
Laser Array ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity
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