Single chip enabled high frequency link based isolated bias supply for silicon carbide MOSFET six-pack power module gate drives

2016 ◽  
Author(s):  
Rui Gao ◽  
Li Yang ◽  
Wensong Yu ◽  
Iqbal Husain
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Single Chip ◽  
Power Module ◽  
Gate Drives

scholarly journals Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4912
Author(s):  
Xiang Lu ◽  
Volker Pickert ◽  
Maher Al-Greer ◽  
Cuili Chen ◽  
Xiang Wang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Temperature Sensitive ◽  
Frequency Chirp ◽  
Single Chip ◽  
Chirp Signals ◽  
Power Switches ◽  
Source Voltage

Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the gate-source impedance are injected into the gate of a discrete SiC device. The gate-source voltage frequency response is captured and then processed using the fast Fourier transform. The data is then accumulated and displayed over the chirp frequency spectrum. Results show a linear relationship between the processed gate-source voltage and the junction temperature. The effectiveness of the proposed TSEPs is demonstrated in a laboratory scenario, where chirp signals are injected in a stand-alone biased discrete SiC module, and in an in-field scenario, where the TSEP concept is applied to a MOSFET operating in a DC/DC converter.

Lifetime Modeling for Silicon Carbide Based Power Module

2021 ◽  
Author(s):  
Michele Calabretta PhD ◽  
Angelo Messina PhD ◽  
Alessandro Sitta
Keyword(s):  
Silicon Carbide ◽  
Power Module

scholarly journals Design of intelligent variable speed warehouse carrier system based on ARM SCM

2021 ◽  
Vol 2083 (2) ◽  
pp. 022005
Author(s):  
Haojun Yang
Keyword(s):  
Intelligent Vehicles ◽  
Software Test ◽  
Variable Speed ◽  
Single Chip ◽  
Power Module ◽  
Single Chip Microcomputer ◽  
Sensor Module ◽  
Motor Module ◽  
Transport Vehicle ◽  
Hardware Circuit

Abstract Aiming at the problem of motion instability caused by the climbing of intelligent vehicles in the process of warehouse transportation, a design of intelligent variable speed warehouse transport vehicle system was proposed. STM32F103C8T6 single-chip microcomputer is used as the core controller of the intelligent variable speed car. The hardware circuit of the system is composed of power module, servo motor module, ultrasonic sensor module, infrared sensor module, MPU6050 gyroscope, motor drive and other modules. At the same time, the software test of vehicle downhill intelligent transportation, tracking detection speed and differential steering conditions is completed. Finally, the performance of the car is verified, and the results show that the smart car has achieved high stability of avoidance tracking, speed and other key functions. It is a downhill process, which has a lot of practical value.

Design and Analysis of a Photovoltaic Power System with Bi-Directional Inverter

2013 ◽  
Vol 291-294 ◽  
pp. 9-13
Author(s):  
De Han Luo ◽  
Yu En Wu ◽  
Qiang Li
Keyword(s):  
Power System ◽  
High Frequency ◽  
Current Control ◽  
High Current ◽  
Single Chip ◽  
Current Harmonic ◽  
Grid Connection ◽  
Photovoltaic Power ◽  
Buffer Power ◽  
Analysis Design

This paper presents the analysis, design, and simulation of a photovoltaic power system with bi-directional inverter, which can be controlled with a single-chip microcontroller, such as dsPIC30F4011. The bi-directional inverter can fulfill grid connection and rectification with power factor correction to regulate the dc bus to a certain range of voltages. So, it will no need energy storage elements to buffer power. But the two stage series can cause high current harmonic, so a predictive current control and modulation principle for the bi-directional inverter is designed and operated in high frequency to reduce the current harmonic. Simulation and experimental results have illustrated the discussed features and significantly demonstrated its feasibility, reliability, and stability.

A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000056-000060 ◽  
Author(s):  
Z. Cole ◽  
B. S. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Power Conversion ◽  
Three Dimensional ◽  
Boost Converter ◽  
Switching Frequency ◽  
Power Module ◽  
Element Analysis ◽  
Switching Characteristics ◽  
Three Dimensional Finite Element

In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge silicon carbide (SiC) multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce over-voltage/current spikes as well as resistance in the power path. The MCPM was designed and packaged using high temperature (> 200 °C) materials and processes. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal resistance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.18 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and on-resistance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. Extremely low rise and fall times of 16.1 and 7.5 ns were observed, respectively. The boost converter demonstrated an efficiency of > 98.6% at 4.8 kW operating at a switching frequency of 250 kHz. In addition, a peak efficiency of 96.5% was achieved for a switching frequency of 1.2 MHz and output power of 3 kW.

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