Multi-timescale modelling for the loading behaviours of power electronics converter

2015 ◽  
Author(s):  
Ke Ma ◽  
Frede Blaabjerg
Keyword(s):  
Power Electronics ◽  
Power Electronics Converter

SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors

2010 ◽  
Vol 645-648 ◽  
pp. 1101-1106 ◽  
Author(s):  
Jürgen Biela ◽  
Mario Schweizer ◽  
Stefan Waffler ◽  
Benjamin Wrzecionko ◽  
Johann Walter Kolar
Keyword(s):  
Band Gap ◽  
Power Electronics ◽  
Power Density ◽  
Performance Improvement ◽  
Wide Band ◽  
System Level ◽  
Wide Band Gap ◽  
Power Semiconductors ◽  
Power Electronics Converter ◽  
The Impact

Switching devices based on wide band gap materials as SiC oer a signicant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.

Conducted and radiated EMI characterization of power electronics converter

1999 ◽  
Vol 20 (6-7) ◽  
pp. 488
Author(s):  
Moez Youssef ◽  
Giulio Antonini ◽  
Edith Clavel ◽  
James Roudet ◽  
S. Cristina ◽  
...  
Keyword(s):  
Power Electronics ◽  
Power Electronics Converter
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