The impact of switching frequency on input filter design for high power density matrix converter

2014 ◽  
Author(s):  
Saeed Safari ◽  
Alberto Castellazzi ◽  
Pat Wheeler
Keyword(s):  
Density Matrix ◽  
Power Density ◽  
High Power ◽  
Filter Design ◽  
Matrix Converter ◽  
Switching Frequency ◽  
High Power Density ◽  
Input Filter ◽  
The Impact

scholarly journals A High Power Density Integrated Charger for Electric Vehicles with Active Ripple Compensation

2015 ◽  
Vol 2015 ◽  
pp. 1-18 ◽  
Author(s):  
Liwen Pan ◽  
Chengning Zhang
Keyword(s):  
Power Density ◽  
Electric Vehicles ◽  
High Power ◽  
Second Order ◽  
Motor Drive ◽  
Switching Frequency ◽  
High Power Density ◽  
Compensation Circuit ◽  
High Switching Frequency ◽  
The Impact

This paper suggests a high power density on-board integrated charger with active ripple compensation circuit for electric vehicles. To obtain a high power density and high efficiency, silicon carbide devices are reported to meet the requirement of high-switching-frequency operation. An integrated bidirectional converter is proposed to function as AC/DC battery charger and to transfer energy between battery pack and motor drive of the traction system. In addition, the conventional H-bridge circuit suffers from ripple power pulsating at second-order line frequency, and a scheme of active ripple compensation circuit has been explored to solve this second-order ripple problem, in which a pair of power switches shared traction mode, a ripple energy storage capacitor, and an energy transfer inductor. Simulation results in MATLAB/Simulink validated the eligibility of the proposed topology. The integrated charger can work as a 70 kW motor drive circuit or a converter with an active ripple compensation circuit for 3 kW charging the battery. The impact of the proposed topology and control strategy on the integrated charger power losses, efficiency, power density, and thermal performance has also been analysed and simulated.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

scholarly journals Automatic EMI Filter Design for Power Electronic Converters Oriented to High Power Density

Electronics ◽  
2018 ◽  
Vol 7 (1) ◽  
pp. 9 ◽  
Author(s):  
Graziella Giglia ◽  
Guido Ala ◽  
Maria Di Piazza ◽  
Giuseppe Giaconia ◽  
Massimiliano Luna ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Filter Design ◽  
Power Electronic ◽  
High Power Density ◽  
Power Electronic Converters ◽  
Emi Filter

scholarly journals A Comparative Study of Different Optimization Methods for Resonance Half-Bridge Converter

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 368 ◽  
Author(s):  
Navid Salehi ◽  
Herminio Martinez-Garcia ◽  
Guillermo Velasco-Quesada
Keyword(s):  
Comparative Study ◽  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Operation Mode ◽  
Optimization Methods ◽  
Switching Frequency ◽  
High Power Density ◽  
Operation Modes ◽  
Laboratory Prototype

The LLC resonance half-bridge converter is one of the most popular DC-DC converters and could easily inspire researchers to design a high-efficiency and high-power-density converter. LLC resonance converters have diverse operation modes based on switching frequency and load that cause designing and optimizing procedure to vary in different modes. In this paper, different operation modes of the LLC half-bridge converter that investigate different optimization procedures are introduced. The results of applying some usual optimization methods implies that for each operation mode some specific methods are more appropriate to achieve high efficiency. To verify the results of each optimization, numerous simulations are done by Pspice and MATLAB and the efficiencies are calculated to compare them. Finally, to verify the result of optimization, the experimental results of a laboratory prototype are provided.

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