A multiband RF MEMS switch with low insertion loss and CMOS-compatible pull-in voltage

2018 ◽  
Author(s):  
Alabi Bojesomo ◽  
Numan Saeed ◽  
Ibrahim M. Elfadel
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Cmos Compatible ◽  
Low Insertion Loss

Design of novel compact anti-stiction and low insertion loss RF MEMS switch

2013 ◽  
Vol 20 (2) ◽  
pp. 337-340 ◽  
Author(s):  
Deepak Bansal ◽  
Amit Kumar ◽  
Akshdeep Sharma ◽  
Prem Kumar ◽  
K. J. Rangra
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Low Insertion Loss

A Packaged THz Shunt RF MEMS Switch with Low Insertion Loss

2021 ◽  
pp. 1-1
Author(s):  
Naibo Zhang ◽  
Ruiliang Song ◽  
Jun Liu ◽  
Jun Yang
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Low Insertion Loss

Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage

2017 ◽  
Vol 93 (1-4) ◽  
pp. 661-670 ◽  
Author(s):  
Yasser Mafinejad ◽  
Abbas Kouzani ◽  
Khalil Mafinezhad ◽  
Reza Hosseinnezhad
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Low Insertion Loss

A Novel Approach for Low Insertion Loss, Multi-band, Capacitive Shunt RF–MEMS Switch

2015 ◽  
Vol 83 (3) ◽  
pp. 2289-2301 ◽  
Author(s):  
Mahesh Angira ◽  
G. M. Sundaram ◽  
Kamal Jit Rangra
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Novel Approach ◽  
Low Insertion Loss ◽  
Multi Band

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

The study of a high-isolation single-pole-double-throw RF MEMS switch

2018 ◽  
Vol 32 (30) ◽  
pp. 1850362
Author(s):  
Lei Han ◽  
Shen Xiao
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Frequency Range ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Thermal Actuators ◽  
Measurement Results ◽  
Better Than

In this paper, design, fabrication and measurements of a novel single-pole-double-throw three-state RF MEMS switch based on silicon substrate are presented. The RF MEMS switch consists of two UV-shaped beam push–pull thermal actuators which have three states of ON, OFF and Deep-OFF by using current actuation. When the switch is at Deep-OFF state, it can provide a higher isolation. The switch is fabricated by MetalMUMPs process. The measurement results show that, to the proposed single-pole-double-throw RF MEMS switch, when Switch I is at the ON state and Switch II is at the OFF state, the return loss is better than −16 dB, the insertion loss of Port1 and Port2 is less than −0.9 dB and the isolation of Port3 and Port1 is better than −22 dB at the frequency range from 8 GHz to 12 GHz. When Switch I is at the ON state and the actuator of Switch II is pulled back, which is called the Deep-OFF state, the return loss of Port1 is better than −15.5 dB, the insertion loss of Port1 and Port2 is better than −0.8 dB, and the isolation of Port3 and Port1 is better than −23.5 dB can be achieved at the frequency range from 8 GHz to 12 GHz.

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