Study on the effectiveness of different electrode geometries for sputtered Aluminium Nitride-based MEMS energy harvesters

Author(s):  
Guido Sordo ◽  
Jacopo Iannacci ◽  
Ulrich Schmid
2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>


IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Eustaquio Martinez-Cisneros ◽  
Luis A. Velosa-Moncada ◽  
Ernesto A. Elvira-Hernandez ◽  
Omar I. Nava-Galindo ◽  
Luz Antonio Aguilera-Cortes ◽  
...  

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