Wafer level packaging of MEMS and 3D integration with CMOS for fabrication of timing microsystems

As IC scaling continues to shrink transistors, the increased number of circuits per chip requires more I/O per unit area (Rent's rule). High I/O count, the need for smaller form factors and the need for better electrical performance drove the technological change towards die being interconnected (assembled) by area array techniques. This review will examine this evolution from die wire bonded on lead frames to flip chip die in wafer level or area array packages and discuss emerging technologies such as copper pillar bumps, fan out packaging, integrated passives, and 3D integration..

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Recent Advances in 3D Integration at IMEC

MRS Proceedings ◽

10.1557/proc-0970-y01-02 ◽

2006 ◽

Vol 970 ◽

Cited By ~ 3

Author(s):

Piet De Moor ◽

Wouter Ruythooren ◽

Philippe Soussan ◽

Bart Swinnen ◽

Kris Baert ◽

...

Keyword(s):

Wafer Level ◽

3D Integration ◽

Integration Technology ◽

Wafer Level Packaging ◽

Recent Advances

ABSTRACTIMEC is focusing its 3D-integration technology developments in 3 distinct directions: 3D-System-in-a-Package (3D-SiP), 3D-Wafer-Level-Packaging (3D-WLP) and 3D-Stacked-IC (3D-SiC). First, the background of these separate approaches will be given. Next the materials and technologies involved, the typical characteristics and the ongoing developments will be discussed. Finally, the roadmap for the 3D-integration in IMEC will be presented.

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Reliability and Performance Improvements of 3D System-in-Packages in Fan-Out Wafer Level Packaging

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2013dpc-wp22 ◽

2013 ◽

Vol 2013 (DPC) ◽

pp. 001458-001485

Author(s):

Scott Hayes ◽

Tony Gong ◽

Doug Mitchell ◽

Michael Vincent ◽

Jason Wright ◽

...

Keyword(s):

Wafer Level ◽

Low Loss ◽

3D Integration ◽

Performance Improvements ◽

Wafer Level Packaging ◽

Effective System ◽

3D Packaging ◽

And Performance ◽

Imaging Sensors ◽

2D And 3D

Recent development efforts for fan-out wafer level packaging (FO-WLP) have focused on system-in-package (SiP) solutions using both 2D and 3D packaging structures. Creating connections between the various elements of the system is one of the critical requirements of the packaging technology. The connections must provide a low loss pathway, exhibit manufacturability and prove reliable. Effective system connections enable complex yet volumetrically and electrically efficient systems to be constructed. The combination of various system elements including, but not limited to, SMDs, CMOS, GaAs, MEMS, power devices, imaging sensors or IPDs gives system designers the capability to generate novel systems and differentiating solutions. Both 2D and 3D SiPs based upon the Redistributed Chi Package (RCP) have been developed for consumer, defense and medical applications. In RCP (i.e. FO-WLP), 2D systems are readily achieved through the use of existing packaging processes, materials and structures. For 3D embodiments, the FO-WLP technology must be expanded. 3D integration in FO-WLP can be achieved with the use of package-on-package (PoP), embedded substrates, package edge connections, die stacking or even TSV approaches. However, a more typical solution to the 3D integration challenge is the through package via (TPV). TPVs can resemble substrate vias but their construction is typically different. Regardless of materials selected or processes used to create the TPV, system connections using a TPV will require a certain level of performance and reliability. Reliability and performance improvements to the 3D RCP technology will be presented.

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MEMS Wafer-level Packaging Technology Using LTCC Wafer

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.132.246 ◽

2012 ◽

Vol 132 (8) ◽

pp. 246-253 ◽

Cited By ~ 1

Author(s):

Mamoru Mohri ◽

Masayoshi Esashi ◽

Shuji Tanaka

Keyword(s):

Wafer Level ◽

Packaging Technology ◽

Wafer Level Packaging

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3D IC/Stacked Device Fault Isolation Using 3D Magnetic Field Imaging

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0033 ◽

2014 ◽

Author(s):

A. Orozco ◽

N.E. Gagliolo ◽

C. Rowlett ◽

E. Wong ◽

A. Moghe ◽

...

Keyword(s):

Magnetic Field ◽

Fault Isolation ◽

Wafer Level ◽

Wafer Level Packaging ◽

Current Location ◽

Geometrical Information ◽

Magnetic Field Imaging ◽

Silicon Vias ◽

Non Destructive ◽

Field Imaging

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

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