Process nano scale mechanical properties measurement of thin metal films using a novel paddle cantilever test structure

2008 ◽  
Author(s):  
Chi-Jia Tong ◽  
Ming-Tzer Lin
Keyword(s):  
Mechanical Properties ◽  
Metal Films ◽  
Test Structure ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Nano Scale

Stability of nano-scale thin metal films under tension

2011 ◽  
Vol 19 (9) ◽  
pp. 2293-2299
Author(s):  
郭振山 GUO Zhen-shan ◽  
王世斌 WANG Shi-bin ◽  
李林安 LI Lin-an ◽  
贾海坤 JIA Hai-kun ◽  
门玉涛 MEN Yu-tao ◽  
...  
Keyword(s):  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Nano Scale

Atomistic Analysis of Nano-Scale Crystal Plasticity in Thin Metal Films

2004 ◽  
Vol 20 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Y.-L. Shen ◽  
R. W. Leger
Keyword(s):  
Plastic Deformation ◽  
Mechanical Response ◽  
Metal Films ◽  
Thin Metal ◽  
Tensile Fracture ◽  
Thin Metal Films ◽  
Free Standing ◽  
Nano Scale ◽  
Plastic Deformation Behavior ◽  
Defect Interactions

ABSTRACTNumerical simulations based on molecular statics are carried out to study nano-scale plastic deformation behavior in thin metal films. Particular attention is devoted to correlating the overall mechanical response and the underlying crystal defect mechanisms during mechanical loading. The simulations are within the two-dimensional framework involving pair molecular interactions in singlecrystal materials. Special modeling features are utilized for studying the formation of dislocations, interface characteristics, and defect interactions. Specific problems investigated in this work include: plastic deformation and tensile fracture in a free-standing film, interface-constrained plasticity in substrate-bonded films, and homogeneous nucleation of dislocations during nanoindentation.

A Novel Capacitance Bulge Apparatus and Measurements of the Mechanical Properties of Al Thin Films Using It

2007 ◽  
Vol 345-346 ◽  
pp. 745-748
Author(s):  
Seung Min Hyun ◽  
Walter L. Brown ◽  
Richard P. Vinci
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Metal Films ◽  
Thin Metal ◽  
Mems Devices ◽  
Thin Metal Films ◽  
Silicon Nitride Membrane ◽  
Relaxation Measurements ◽  
The Stability ◽  
Bulge Height

Thin metal films often play an important role as structural elements or reflective surfaces in MEMS applications. Mechanical properties of the films are important due to their influence on the performance of MEMS devices that involve bending or stretching metal parts. In order to gain a better understanding of the mechanical behavior of thin metal films, we have developed a novel bulge system and measured mechanical properties of aluminum thin films. The thin films were prepared by e-beam evaporation of high purity Al onto 2 or 3mm ×12 mm rectangular silicon nitride membrane windows in silicon frames. N2 gas was used to pressurize and thus bulge the membranes. The bulge height was measured based on changes of capacitance between the membrane and a fixed, closely spaced electrode. This apparatus provides resolution of approximately 50 nm in bulge height at a data acquisition rate of 100/sec and provides strain rates in the membrane up to 10-5/sec. The stability of the apparatus allows stress relaxation measurements to be made to times of many hours. Time dependent elastic modulus changes of 1 m Al films were measured over periods of times under constant stress.

Evaluation of the mechanical properties of thin metal films

1999 ◽  
Vol 116-119 ◽  
pp. 128-132 ◽  
Author(s):  
Dejun Ma ◽  
Kewei Xu ◽  
Jiawen He ◽  
Jian Lu
Keyword(s):  
Mechanical Properties ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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