278 nm deep ultraviolet LEDs with 11% external quantum efficiency

2012 ◽  
Author(s):  
Max Shatalov ◽  
Wenhong Sun ◽  
Alex Lunev ◽  
Xuhong Hu ◽  
Alex Dobrinsky ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Deep Ultraviolet

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

2012 ◽  
Vol 5 (8) ◽  
pp. 082101 ◽  
Author(s):  
Max Shatalov ◽  
Wenhong Sun ◽  
Alex Lunev ◽  
Xuhong Hu ◽  
Alex Dobrinsky ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

AlGaN/SiC Heterojunction Ultraviolet Photodiodes

2016 ◽  
Vol 858 ◽  
pp. 1206-1209 ◽  
Author(s):  
Anand V. Sampath ◽  
Yoajia Chen ◽  
Q. Zhou ◽  
Ryan W. Enck ◽  
Gregory A. Garrett ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Spectral Range ◽  
External Quantum Efficiency ◽  
Depletion Region ◽  
Wide Spectral Range ◽  
Deep Ultraviolet

We report on improvement in the deep ultraviolet (DUV) photoresponse of SiC based detectors through the development of n- AlxGa1-xN / i-p SiC heterojunction photodiodes. Fabricated photodiodes have high external quantum efficiency (EQE), greater than 60%, over a wide spectral range from 215-255 nm that is ~10x enhancement in performance over comparable homogenous SiC photodiodes at the shortest wavelength. This is attributed to photogeneration of carriers within the SiC depletion region by DUV illumination of the diode through the n- AlxGa1-xN “window”, as compared to a typical homogenous SiC n-i-p structure where the carriers are photogenerated in the n-type neutral region, resulting in more efficient collection of holes through drift

Demonstration of ultra-small (0.2%) for mini-displays

2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency
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