High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics

2012 ◽  
Author(s):  
Matthew J. Hollander ◽  
Ashish Agrawal ◽  
Michael S. Bresnehan ◽  
Michael LaBella ◽  
Kathleen A. Trumbull ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Gate Dielectrics ◽  
Hexagonal Boron Nitride ◽  
Large Area ◽  
Free Standing

Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films

2016 ◽  
Vol 9 (6) ◽  
pp. 065801 ◽  
Author(s):  
Rajendra Dahal ◽  
Kawser Ahmed ◽  
Jia Woei Wu ◽  
Adam Weltz ◽  
James Jian-Qiang Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Hexagonal Boron Nitride ◽  
Charge Carrier Transport ◽  
Free Standing

Reaction Synthesized Boron Nitride-Containing Composites (BNCC)

2007 ◽  
Vol 280-283 ◽  
pp. 1385-1390
Author(s):  
Guo Jun Zhang ◽  
Tatsuki Ohji ◽  
Shuzo Kanzaki
Keyword(s):  
Boron Nitride ◽  
Hot Pressing ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
High Strength ◽  
Reactive Sintering ◽  
Boron Source ◽  
Inorganic Reactions ◽  
Reactive Hot Pressing

Based on the proposed inorganic reactions a series of high performance hexagonal boron nitride-containing composites (BNCC), include SiC-BN, Si3N4-SiC-BN, SiAlON-BN, AlN-BN, Al2O3-BN, AlON-BN and mullite-BN, have been prepared via reactive hot pressing or pressureless reactive sintering. Various boron-bearing components such as B, B4C, AlB2, SiB4, SiB6, B2O3 or H3BO3, 9Al2O3×2B2O3 (9A2B) and 2Al2O3×B2O3 (2AB) are used as the boron source. On the other hand, nitrogen gas or solid state nitirgen-bearing metal nitrides such as Si3N4 and AlN can be used as the nitrogen source. The in situ synthesized composites demonstrated homogeneous and isotropical microstructures with very fine (nano-sized) BN platelets or their agglomerates distributed in the matrixes. These composites showed high strength, low elasticity and improved strain tolerance. In this article the reaction design, thermodynamics, reaction mechanisms, reactive hot pressing or pressureless reactive sintering, microstructures and mechanical properties will be discussed.

Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate

ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 6236-6244 ◽  
Author(s):  
Yuki Uchida ◽  
Sho Nakandakari ◽  
Kenji Kawahara ◽  
Shigeto Yamasaki ◽  
Masatoshi Mitsuhara ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Controlled Growth ◽  
Large Area

scholarly journals Catalyst-free one step synthesis of large area vertically stacked N-doped graphene-boron nitride heterostructures from biomass source

Nanoscale ◽  
2018 ◽  
Vol 10 (9) ◽  
pp. 4391-4397 ◽  
Author(s):  
Ivan Esteve-Adell ◽  
Jinbao He ◽  
Fernando Ramiro ◽  
Pedro Atienzar ◽  
Ana Primo ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Inert Atmosphere ◽  
Large Area ◽  
Catalyst Free ◽  
Doped Graphene ◽  
One Step ◽  
The One

A procedure for the one-step preparation of films of few-layer N-doped graphene on top of nanometric hexagonal boron nitride sheets based on the pyrolysis at 900 °C under an inert atmosphere is reported.

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Science ◽  
2018 ◽  
Vol 362 (6416) ◽  
pp. 817-821 ◽  
Author(s):  
Joo Song Lee ◽  
Soo Ho Choi ◽  
Seok Joon Yun ◽  
Yong In Kim ◽  
Stephen Boandoh ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Monolayer Films ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Liquid Gold ◽  
Grain Formation

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.

Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition

2015 ◽  
Vol 26 (27) ◽  
pp. 275601 ◽  
Author(s):  
Yao Wen ◽  
Xunzhong Shang ◽  
Ji Dong ◽  
Kai Xu ◽  
Jun He ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Large Area ◽  
Cu Foil

Electron microscopic characterization of multi-layer boron nitride nanosheets

2013 ◽  
Vol 1549 ◽  
pp. 85-90
Author(s):  
Muhammad Sajjad ◽  
Peter Feng
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Direct Synthesis ◽  
Laser Pulses ◽  
Synthesis Process ◽  
Large Area ◽  
Electron Microscopic ◽  
Boron Nitride Nanosheets ◽  
Selected Area Electron Diffraction ◽  
High Resolution Tem

AbstractWe report on the direct synthesis of multi-layer boron nitride nanosheets (BNNSs) and their electron microscopic characterization. The synthesis process is carried out by irradiating hexagonal boron nitride (h-BN) target using short laser pulses. Scanning electron microscopy showed large area (≈50×50 μm2) flat layers of BNNSs transparent to the electron beam. Low magnification transmission electron microscope (TEM) is used to characterize different areas of nanosheets. TEM revealed that each individual nanosheet is composed of several layers. High resolution TEM (HRTEM) measurements confirmed the layered structure. HRTEM analysis of the edge of a nanosheet showed 10 layers from which we obtained the thickness (3.3nm) of an individual nanosheet. Selected area electron diffraction pattern indicated polycrystalline structure of nanosheets. Raman spectroscopy clearly identified E2g vibrational mode related to h-BN.

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