Use of Anisotropic Laser Etching and Transparent Conducting Layer to Alleviate Current Crowding Effect in Vertical-Structured GaN-Based Light-Emitting Diodes

2006 ◽  
Author(s):  
Shui-jinn Wang ◽  
Tron-min Chen ◽  
Kai-ming Uang ◽  
Shiue-lung Chen ◽  
Ching-chung Tsai ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Conducting Layer ◽  
Current Crowding ◽  
Crowding Effect ◽  
Laser Etching ◽  
Light Emitting ◽  
Transparent Conducting ◽  
Transparent Conducting Layer

Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer

2010 ◽  
Vol 96 (5) ◽  
pp. 051124 ◽  
Author(s):  
Tae-Young Park ◽  
Yong-Seok Choi ◽  
Jang-Won Kang ◽  
Jae-Ho Jeong ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Optical Power ◽  
Conducting Layer ◽  
Forward Voltage ◽  
Light Emitting ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Transparent Conducting Layer

Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes

2007 ◽  
Vol 90 (4) ◽  
pp. 041115 ◽  
Author(s):  
Tron-Min Chen ◽  
Shui-Jinn Wang ◽  
Kai-Ming Uang ◽  
Shiue-Lung Chen ◽  
Wei-Chih Tsai ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Current Crowding ◽  
Crowding Effect ◽  
Laser Etching ◽  
Light Emitting

scholarly journals Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes

2021 ◽  
Author(s):  
Andreas Liudi Mulyo ◽  
Anjan Mukherjee ◽  
Ida Marie Høiaas ◽  
Lyubomir Ahtapodov ◽  
Tron Arne Nilsen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Transparent Conducting ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

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