High-Performance Enhancement-mode ZnO Nanowire Field-Effect Transistors with Organic Nanodielectrics: Effects of Ozone Treatments

2006 ◽  
Author(s):  
Sanghyun Ju ◽  
Kangho Lee ◽  
Myung-han Yoon ◽  
Antonio Facchetti ◽  
Tobin Marks ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Performance Enhancement ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Enhancement Mode ◽  
Ozone Treatments

scholarly journals High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

2007 ◽  
Vol 18 (15) ◽  
pp. 155201 ◽  
Author(s):  
Sanghyun Ju ◽  
Kangho Lee ◽  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J Marks ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Ozone Treatment ◽  
Metal Contacts ◽  
Zno Nanowire

High-performance ZnO nanowire field effect transistors

2006 ◽  
Vol 89 (13) ◽  
pp. 133113 ◽  
Author(s):  
Pai-Chun Chang ◽  
Zhiyong Fan ◽  
Chung-Jen Chien ◽  
Daniel Stichtenoth ◽  
Carsten Ronning ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zno Nanowire

Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors

2016 ◽  
Vol 4 (22) ◽  
pp. 5102-5108 ◽  
Author(s):  
Marolop Simanullang ◽  
G. Bimananda M. Wisna ◽  
Koichi Usami ◽  
Wei Cao ◽  
Yukio Kawano ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Experimental Demonstration ◽  
Germanium Nanowires ◽  
Enhancement Mode ◽  
Catalyst Free ◽  
Mode Field ◽  
P Type

The experimental demonstration of high-performance p-type enhancement-mode field-effect transistors fabricated from undoped and catalyst-free germanium nanowires.

Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs)

2009 ◽  
Vol 9 (10) ◽  
pp. 5839-5844 ◽  
Author(s):  
Yong Kyu Park ◽  
Ahmad Umar ◽  
Jin-Seok Kim ◽  
H. Y. Yang ◽  
Jeong Su Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zno Nanowire

scholarly journals Erratum: “High-performance ZnO nanowire field effect transistors” [Appl. Phys. Lett. 89, 133113 (2006)]

2009 ◽  
Vol 94 (7) ◽  
pp. 079902 ◽  
Author(s):  
Pai-Chun Chang ◽  
Zhiyong Fan ◽  
Chung-Jen Chien ◽  
Daniel Stichtenoch ◽  
Carsten Ronning ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zno Nanowire

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Sign in / Sign up

Export Citation Format

Share Document