Optoelectronic conversion through 850nm band single mode Si/sub 3/N/sub 4/ photonic waveguides for Si-on-chip integration

Author(s):  
T. Matsuura ◽  
A. Yamada ◽  
J. Murota ◽  
E. Tamechika ◽  
K. Wada ◽  
...  
Nanoscale ◽  
2021 ◽  
Vol 13 (37) ◽  
pp. 15830-15836
Author(s):  
Ahmad Syazwan Ahmad Kamal ◽  
Cheng-Chieh Lin ◽  
Di Xing ◽  
Yang-Chun Lee ◽  
Zhiyu Wang ◽  
...  

A newly developed lithographic in-mold patterning process is proposed to fabricate on-chip single-mode distributed-Bragg-reflector waveguide small lasers that utilized CsPbBr3 perovskite nanocrystals as the gain material.


2011 ◽  
Vol 98 (6) ◽  
pp. 061103 ◽  
Author(s):  
Wonsuk Lee ◽  
Hao Li ◽  
Jonathan D. Suter ◽  
Karthik Reddy ◽  
Yuze Sun ◽  
...  
Keyword(s):  

2018 ◽  
Vol 32 (08) ◽  
pp. 1850088 ◽  
Author(s):  
Yusuf Gül

We consider the single photon transistor in coupled cavity system of resonators interacting with multilevel superconducting artificial atom simultaneously. Effective single mode transformation is used for the diagonalization of the Hamiltonian and impedance matching in terms of the normal modes. Storage and transmission of the incident field are described by the interactions between the cavities controlling the atomic transitions of lowest lying states. Rabi splitting of vacuum-induced multiphoton transitions is considered in input/output relations by the quadrature operators in the absence of the input field. Second-order coherence functions are employed to investigate the photon blockade and delocalization–localization transitions of cavity fields. Spontaneous virtual photon conversion into real photons is investigated in localized and oscillating regimes. Reflection and transmission of cavity output fields are investigated in the presence of the multilevel transitions. Accumulation and firing of the reflected and transmitted fields are used to investigate the synchronization of the bunching spike train of transmitted field and population imbalance of cavity fields. In the presence of single photon gate field, gain enhancement is explained for transmitted regime.


2019 ◽  
Vol 44 (11) ◽  
pp. 2835 ◽  
Author(s):  
Ziwei Wang ◽  
Shixing Yuan ◽  
Gaoneng Dong ◽  
Ruolan Wang ◽  
Liao Chen ◽  
...  

2019 ◽  
Vol 11 (1) ◽  
pp. 1-18 ◽  
Author(s):  
Yevhenii Morozov ◽  
Anatoly Lapchuk ◽  
Zichun Le ◽  
Ye-Fei Dong

2014 ◽  
Vol 13 (2) ◽  
pp. 023011
Author(s):  
Maurine Malak ◽  
Konstantins Jefimovs ◽  
Irène Philipoussis ◽  
Joab Di Francesco ◽  
Toralf Scharf
Keyword(s):  

Nanoscale ◽  
2022 ◽  
Author(s):  
Feifei Qin ◽  
Gangyi Zhu ◽  
Junbo Yang ◽  
Lai Wei ◽  
Qiannan Cui ◽  
...  

Effective lasing mode control and unidirectional coupling of semiconductor microlasers are vital to boost their applications in optical interconnects, on-chip communication and bio-sensors. In this paper, symmetric and asymmetric GaN...


Author(s):  
Yair Antman ◽  
Ohad Westreich ◽  
Andres Gil-Molina ◽  
Xingchen Ji ◽  
Alexander L. Gaeta ◽  
...  
Keyword(s):  
On Chip ◽  

Sign in / Sign up

Export Citation Format

Share Document