Wave diffraction by many element multilayer cylindrical gratings with dielectric layers

2002 ◽  
Author(s):  
F.G. Bogdanov ◽  
G.Sh. Kevanishvili ◽  
T.B. Kobakhidze
Keyword(s):  
Wave Diffraction ◽  
Dielectric Layers

Precipitation in silicon: Microanalysis

1988 ◽  
Vol 46 ◽  
pp. 474-475
Author(s):  
R.W. Carpenter
Keyword(s):  
Transition Metals ◽  
Spatial Resolution ◽  
Thin Foil ◽  
Precipitation Reaction ◽  
High Current ◽  
Reaction Products ◽  
Carbon And Nitrogen ◽  
Dielectric Layers ◽  
Precipitation Processes ◽  
Areas Of Interest

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

Standing wave diffraction with a beam of slow atoms

1997 ◽  
Vol 44 (10) ◽  
pp. 1863-1882 ◽  
Author(s):  
S. KUNZE , S. DURR, K. DIECKMANN , M.
Keyword(s):  
Standing Wave ◽  
Wave Diffraction

A SEMI-ANALYTICAL METHOD FOR SOLVING INVERSE PROBLEMS OF WAVE DIFFRACTION BY INHOMOGENEOUS LAYERS

2015 ◽  
Vol 74 (11) ◽  
pp. 945-969 ◽  
Author(s):  
A. V. Brovenko ◽  
N.P. Melezhik ◽  
P. N. Melezhik ◽  
A.Yu. Poyedinchuk ◽  
Alexey A. Vertiy
Keyword(s):  
Inverse Problems ◽  
Wave Diffraction ◽  
Analytical Method

SH-Wave Scattering From the Interface Defect

2017 ◽  
Vol 5 (1) ◽  
pp. 45-50
Author(s):  
Myron Voytko ◽  
◽  
Yaroslav Kulynych ◽  
Dozyslav Kuryliak
Keyword(s):  
Half Space ◽  
Wave Diffraction ◽  
Scattered Field ◽  
Wave Scattering ◽  
Elastic Layer ◽  
Analytical Form ◽  
Structure Parameters ◽  
Sh Wave ◽  
Interface Defect ◽  
Hopf Method

The problem of the elastic SH-wave diffraction from the semi-infinite interface defect in the rigid junction of the elastic layer and the half-space is solved. The defect is modeled by the impedance surface. The solution is obtained by the Wiener- Hopf method. The dependences of the scattered field on the structure parameters are presented in analytical form. Verifica¬tion of the obtained solution is presented.

Precision Xe Plasma FIB Delayering for Physical Failure Analysis of Sub-20 nm Microprocessor Devices

2017 ◽  
Author(s):  
D. Zudhistira ◽  
V. Viswanathan ◽  
V. Narang ◽  
J.M. Chin ◽  
S. Sharang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Dielectric Films ◽  
Planar Surface ◽  
Chemical Methods ◽  
Root Cause ◽  
Essential Step ◽  
Dielectric Layers ◽  
Wet Chemical ◽  
20 Nm ◽  
Low K

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.

Studies of Millimeter-Wave Diffraction Devices and Materials. Phase III.

1986 ◽  
Author(s):  
Eugene R. Leach ◽  
Milton R. Seiler ◽  
Jennifer I. Halman
Keyword(s):  
Millimeter Wave ◽  
Wave Diffraction ◽  
Phase Iii
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