Up-state and Down-state Capacitance Measurement in RF MEMS One-bit Switch Designed at Microwave Frequency Range

2019 ◽  
Author(s):  
Pampa Debnath ◽  
Arpan Deyasi ◽  
Angsuman Sarkar
Keyword(s):  
Rf Mems ◽  
Microwave Frequency ◽  
Capacitance Measurement ◽  
Frequency Range ◽  
State Capacitance

EBG at microwave frequency range: Bragg and/or resonant effect?

2004 ◽  
Vol 42 (5) ◽  
pp. 383-385 ◽  
Author(s):  
Asier Ibáñez Loinaz ◽  
Carlos del Río Bocio
Keyword(s):  
Microwave Frequency ◽  
Frequency Range ◽  
Resonant Effect

scholarly journals Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 270
Author(s):  
Yi-Fan Tsao ◽  
Joachim Würfl ◽  
Heng-Tung Hsu
Keyword(s):  
Insertion Loss ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Conventional Approach ◽  
High Electron ◽  
Frequency Range ◽  
Fractional Bandwidth ◽  
High Electron Mobility ◽  
State Capacitance ◽  
Better Than

In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.

scholarly journals An RF-MEMS-Based Digitally Tunable SIW Filter in X-Band for Communication Satellite Applications

2019 ◽  
Vol 9 (9) ◽  
pp. 1838 ◽  
Author(s):  
Abbas El Mostrah ◽  
Andrei Muller ◽  
Jean-François Favennec ◽  
Benjamin Potelon ◽  
Alexandre Manchec ◽  
...  
Keyword(s):  
Tuning Range ◽  
Rf Mems ◽  
Frequency Control ◽  
Frequency Range ◽  
Digital Frequency ◽  
X Band ◽  
Satellite Applications ◽  
Waveguide Filter ◽  
Functional States ◽  
Commercial Off The Shelf

This paper presents a digitally tunable SIW (substrate integrated waveguide) filter designed for X-band, based on RF-MEMS (radio frequency micro-electrical-mechanical systems) technology. Four commercial off-the-shelf RF-MEMS single-pole single-throw (SPST) switches were directly mounted on the upper surface of the filter, with metallic tuning posts specifically located within each cavity to define the potential achievable frequency range. Fabricated on standard alumina substrate, the design of the filter and the biasing network enabled fine digital frequency control of up to four functional states by the inclusion of wire bondings between each switch and the substrate. A relative tuning range of 2.3% was achieved between the lower and upper discrete states of 2.76% and 2.89% in the 3 dB fractional bandwidths.

Microwave Photoconductivity Measurements to Characterize Semiconductors

1990 ◽  
Vol 189 ◽  
Author(s):  
M. Kunst
Keyword(s):  
Semiconductor Devices ◽  
Microwave Frequency ◽  
Frequency Range ◽  
General Survey ◽  
Characterization Techniques ◽  
Transient Photoconductivity

ABSTRACTAfter a general survey of characterization techniques the use of transient photoconductivity measurements in the microwave frequency range for the characterization of semiconductors and semiconductor devices for (opto)electronic applications is treated. Experimental details and applications of these measurements are given.

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