A Proposed High-k Dielectric Based Thin Film Transistor for Next Generation Backplane Display Technology

2019 ◽  
Author(s):  
Abhishek Kumar Singh ◽  
Ashutosh Kumar Dikshit ◽  
Brahmdutta Dixit ◽  
V.V. Kharche ◽  
Kamal ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Next Generation ◽  
High K ◽  
Display Technology ◽  
High K Dielectric

EHD-jet patterned MoS2 on a high-k dielectric for high mobility in thin film transistor applications

2021 ◽  
Vol 32 (24) ◽  
pp. 245710
Author(s):  
Thi Thu Thuy Can ◽  
Hak-Lim Ko ◽  
Woon-Seop Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
High Mobility ◽  
High K ◽  
High K Dielectric

Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric

2020 ◽  
Vol 67 (3) ◽  
pp. 1021-1026 ◽  
Author(s):  
Jewel Kumer Saha ◽  
Mohammad Masum Billah ◽  
Ravindra Naik Bukke ◽  
Youn Goo Kim ◽  
Narendra Naik Mude ◽  
...  
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
High K ◽  
High K Dielectric

Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

2016 ◽  
Vol 108 (23) ◽  
pp. 233506 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Nickel Oxide ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
High K ◽  
High K Dielectric ◽  
Nickel Oxide Thin Film

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

scholarly journals Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Jui-Feng Su
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
Large Current ◽  
High K ◽  
Dose Concentration ◽  
Top Contact

The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1), a large current ratio (>103) and a low operation voltage (<6 V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

Low voltage operated, sol–gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric

2013 ◽  
Vol 138 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
Beyong-Hwan Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
High K
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