Effect of Ca(OH)2, hBN and Mg(OH)2 based insulators as composite oxides in magnetic tunnel junction memory device properties

2017 ◽  
Author(s):  
Bikash Sharma ◽  
Amab Mukhopadhyay ◽  
Lopamudra Banerjee ◽  
Amretashis Sengupta ◽  
Hafizur Rahaman ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Memory Device ◽  
Composite Oxides ◽  
Device Properties

scholarly journals Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Pawan Tyagi ◽  
Hayden Brown ◽  
Andrew Grizzle ◽  
Christopher D’Angelo ◽  
Bishnu R. Dahal
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Molecular Device ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes ◽  
Covalently Bonded ◽  
Wide Range ◽  
Device Properties ◽  
Theoretical Simulations

AbstractNearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

An Associative Memory Device Using a Magnetic Tunnel Junction

2015 ◽  
Vol 51 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Dong Ik Suh ◽  
Joon Pyo Kil ◽  
Yeonhoi Choi ◽  
Gi Yoon Bae ◽  
Wanjun Park
Keyword(s):  
Associative Memory ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Memory Device

Normalization and correction factors for magnetic tunnel junction sensor performances comparison

2021 ◽  
pp. 1-1
Author(s):  
E. Monteblanco ◽  
A. Solignac ◽  
C. Chopin ◽  
J. Moulin ◽  
P. Belliot ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Correction Factors

scholarly journals Nanoscale domain wall devices with magnetic tunnel junction read and write

2021 ◽  
Vol 4 (6) ◽  
pp. 392-398 ◽  
Author(s):  
E. Raymenants ◽  
O. Bultynck ◽  
D. Wan ◽  
T. Devolder ◽  
K. Garello ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Devices

scholarly journals A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device

2020 ◽  
Vol 2 (12) ◽  
pp. 2070120
Author(s):  
Jeongmin Hong ◽  
Xin Li ◽  
Nuo Xu ◽  
Hong Chen ◽  
Stefano Cabrini ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction

scholarly journals Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

2021 ◽  
Vol 118 (11) ◽  
pp. 112401
Author(s):  
Mahshid Alamdar ◽  
Thomas Leonard ◽  
Can Cui ◽  
Bishweshwor P. Rimal ◽  
Lin Xue ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Orbit

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

2021 ◽  
Vol 118 (20) ◽  
pp. 202405
Author(s):  
Samuel Liu ◽  
T. Patrick Xiao ◽  
Can Cui ◽  
Jean Anne C. Incorvia ◽  
Christopher H. Bennett ◽  
...  
Keyword(s):  
Neural Networks ◽  
Domain Wall ◽  
Tunnel Junction ◽  
Deep Neural Networks ◽  
Magnetic Tunnel Junction ◽  
Artificial Synapse
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