A 2–10 GHz ultra-wideband common-gate low noise amplifier using body bias technique in 0.18 μm CMOS

2017 ◽  
Author(s):  
Syed Mubashir ◽  
Vikram Singh
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Common Gate ◽  
Noise Amplifier ◽  
Body Bias

A 3–5 GHz ultra wideband common-gate low noise amplifier

2012 ◽  
Author(s):  
Abolfazl Zokaei ◽  
Masih Afzali Boroujeni ◽  
Farhad Razaghian ◽  
Jafar Alvankarian ◽  
Masoud Dousti
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Common Gate ◽  
Noise Amplifier

scholarly journals Low Noise Amplifier with Improved Gain and Reduced Noise-Figure in 90nm CMOS Technology

2021 ◽  
pp. 85-94
Author(s):  
Dr. Rashmi S B ◽  
Mr. Raghavendra B ◽  
Mr. Sanketh V
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Common Source ◽  
Frequency Range ◽  
Common Gate ◽  
Noise Amplifier

A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications is presented in this paper. The proposed CMOS low noise amplifier (LNA) is designed using common-gate (CG) topology as the first stage to achieve ultra-wideband input matching. The common-gate (CG) is cascaded with common- source (CS) topology with current-reused configuration to enhance the gain and noise figure (NF) performance of the LNA with low power. The Buffer stage is used as output matching network to improve the reflection coefficient. The proposed low noise amplifier (LNA) is implemented using CADENCE Virtuoso Analog and Digital Design Environment tool in 90nm CMOS technology. The LNA provides a forward voltage gain or power gain (S21) of 32.34dB , a minimum noise figure of 2dB, a reverse-isolation (S12) of less than - 38.74dB and an output reflection coefficient (S22) of less than -7.4dB for the entire ultra-wideband frequency range. The proposed LNA has an input reflection coefficient (S11) of less than -10dB for the ultra-wideband frequency range. It achieves input referred 1-dB compression point of 78.53dBm and input referred 3-dB compression point of 13dBm. It consumes only 24.226mW of power from a Vdd supply of 0.7V.

scholarly journals Design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier with forward body bias technique for wireless applications

2020 ◽  
Author(s):  
N. F. A. B. Halim ◽  
S. A. Z. Murad ◽  
A. Harun ◽  
M. N. M. Isa ◽  
S. N. Mohyar ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Wireless Applications ◽  
Noise Amplifier ◽  
Forward Body Bias ◽  
Body Bias

scholarly journals Analysis and design of common-gate low-noise amplifier for wideband applications

2009 ◽  
Vol 37 (2) ◽  
pp. 257-281 ◽  
Author(s):  
Jouni Kaukovuori ◽  
Mikko Kaltiokallio ◽  
Jussi Ryynänen
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Analysis And Design ◽  
Common Gate ◽  
Noise Amplifier

An ultra-wideband variable gain low noise amplifier

2016 ◽  
Author(s):  
Ji-tian Chen ◽  
Wan-rong Zhang ◽  
Dong-yue Jin ◽  
Hong-yun Xie ◽  
Ya-ze Liu ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Variable Gain ◽  
Noise Amplifier
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