Characterization of Silicon Carbide Differential Amplifiers at High Temperature

2007 ◽  
Author(s):  
Amita C. Patil ◽  
Xiao-An Fu ◽  
Chompoonoot Anupongongarch ◽  
Mehran Mehregany ◽  
Steven Garverick
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Differential Amplifiers

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

scholarly journals Synthesis and Characterization of Silicon Carbide in the Application of High Temperature Solar Surface Receptors

2014 ◽  
Vol 57 ◽  
pp. 533-540 ◽  
Author(s):  
L.G. Ceballos-Mendivil ◽  
R.E. Cabanillas-López ◽  
J.C. Tánori-Córdova ◽  
R. Murrieta-Yescas ◽  
P. Zavala-Rivera ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Solar Surface ◽  
Synthesis And Characterization ◽  
Surface Receptors

Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal

2008 ◽  
Vol 600-603 ◽  
pp. 855-858 ◽  
Author(s):  
Tomohisa Kato ◽  
Toshiya Noro ◽  
Hideaki Takahashi ◽  
Satarou Yamaguchi ◽  
Kazuo Arai
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electric Discharge ◽  
High Voltage ◽  
High Speed ◽  
Surface Damage ◽  
Lower Surface ◽  
Etch Pits ◽  
Electric Discharge Machining

In this study, we report electric discharge machining (EDM) as a new cutting method for silicon carbide (SiC) single crystals. Moreover, we discuss characteristics and usefulness of the EDM for the SiC. The EDM realized not only high speed and smooth cutting but also lower surface damage. Defect propagation in the EDM SiCs have been also estimated by etch pits observation using molten KOH, however, we confirmed the EDM has caused no damage inside the SiCs in spite of high voltage and high temperature during the machining.

High-Temperature SiC MOSFET Gas Sensors

2004 ◽  
Vol 828 ◽  
Author(s):  
Kevin Matocha ◽  
Vinayak Tilak ◽  
Peter Sandvik ◽  
Jesse Tucker
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Silicon Dioxide ◽  
Gas Sensors ◽  
Gate Dielectric ◽  
Low Cost ◽  
Metal Gate ◽  
Catalytic Metal ◽  
Combustion Exhaust

ABSTRACTDue to tightening restrictions on combustion exhaust emissions, low-cost sensors are desired for monitoring NOx production in high-temperature exhaust streams. This paper reports the characterization of Silicon Carbide MOSFET NO sensors for use in combustion exhaust monitoring. SiC depletion-mode MOSFETs were fabricated using a thermally-grown silicon dioxide gate dielectric and a Pt catalytic metal gate electrode. SiC MOSFET gas sensors were characterized at temperatures as high as 525°C in an ambient of synthetic air and NO (50–200 ppm) for 30 hours with no degradation.

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