100 Gb/s Optical DP-QPSK Using Two Surface Mount Dual Channel Modulator Drivers

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340054 ◽

2012 ◽

Cited By ~ 1

Author(s):

Craig Steinbeiser ◽

Khiem Dinh ◽

Anthony Chiu ◽

Matt Coutant ◽

Oleh Krutko ◽

...

Keyword(s):

Surface Mount ◽

Dual Channel ◽

Channel Modulator

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Design of terahertz dual-channel modulator based on metamaterials

Applied Optics ◽

10.1364/ao.440152 ◽

2021 ◽

Author(s):

Wu Pan ◽

Yang Liang ◽

Ma Yong ◽

Liu wen ◽

yun Xiao

Keyword(s):

Dual Channel ◽

Channel Modulator

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Diagnostic value of the dual channel esophageal pH-metry in supraesophageal manifestations of gastroesophageal reflux disease

Zeitschrift für Gastroenterologie ◽

10.1055/s-2008-1079689 ◽

2008 ◽

Vol 46 (05) ◽

Author(s):

R Róka ◽

A Rosztóczy ◽

M Bencze ◽

F Izbéki ◽

K Vadászi ◽

...

Keyword(s):

Gastroesophageal Reflux Disease ◽

Gastroesophageal Reflux ◽

Reflux Disease ◽

Diagnostic Value ◽

Dual Channel ◽

Esophageal Ph ◽

Ph Metry

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Performance of Dual-Channel Codeless and Semicodeless Processing

Proceedings of the 2019 International Technical Meeting of The Institute of Navigation ◽

10.33012/2019.16713 ◽

2019 ◽

Author(s):

John W. Betz ◽

Alessandro P. Cerruti

Keyword(s):

Dual Channel

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Gold Pre-tinning through Single Dynamic Wave Soldering for Pin Through-Hole and Surface Mount Components

International Institute of Engineers April 20-21, 2015 Bangkok (Thailand) ◽

10.15242/iie.e0415022 ◽

2015 ◽

Keyword(s):

Surface Mount ◽

Wave Soldering ◽

Through Hole ◽

Dynamic Wave

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Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

MRS Proceedings ◽

10.1557/proc-765-d4.10/g1.10 ◽

2003 ◽

Vol 765 ◽

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald

Keyword(s):

Strained Silicon ◽

Strained Layer ◽

Dual Channel ◽

Enhanced Mobility ◽

Valence Bands ◽

Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

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