GaN Wide Band Power Integrated Circuits

2006 ◽  
Author(s):  
J. P. Conlon ◽  
N. Zhang ◽  
M. J. Poulton ◽  
J. B. Shealy ◽  
R. Vetury ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Wide Band ◽  
Band Power

scholarly journals Systematic Approach for Designing Ultra Wide Band Power Amplifier

2012 ◽  
Vol 6 (5) ◽  
Author(s):  
Yadollah Rezazadeh ◽  
Parviz Amiri ◽  
Maryam Baghban Kondori
Keyword(s):  
Power Amplifier ◽  
Systematic Approach ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Band Power

Wide-band polarization controller for Si photonic integrated circuits

2016 ◽  
Vol 41 (24) ◽  
pp. 5656 ◽  
Author(s):  
P. Velha ◽  
V. Sorianello ◽  
M. V. Preite ◽  
G. De Angelis ◽  
T. Cassese ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Wide Band ◽  
Polarization Controller

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

2002 ◽  
Vol 743 ◽  
Author(s):  
Frederick W. Clarke ◽  
Fat Duen Ho ◽  
M. Asif Khan ◽  
Grigory Simin ◽  
J. Yang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Elevated Temperatures ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Wide Band ◽  
Gate Leakage ◽  
Gate Current ◽  
Heterostructure Field Effect Transistors ◽  
Voltage Swing

AbstractGate current plays an important role in determining the characteristics and limiting performance of GaN-based field effect transistors. In GaN-based HFETs, the gate current limits the gate voltage swing and, hence, the maximum device current. Since the electron transport across the wide band gap barrier layer involves trapping, under certain bias conditions, the gate current leads to the threshold voltage shifts and causes reliability problems. Under reverse bias, the gate leakage in GaN-based HFET dominates the minimum (pinch-off) drain current. Insulating gate HFETs (i.e. Metal Oxide Heterostructure Field Effect Transistors – MOSHFETs) have the gate leakage currents 4 – 6 orders of magnitude lower than HFETs, even at elevated temperatures up to 300 °C. In this paper, we report on the gate current characteristics in these devices at room and elevated temperatures. We propose a semi-empirical model for the current-voltage characteristics in these devices, which is in good agreement with experimental data. Our data also show that both tunneling and temperature activation are important factors in MOSHFETs. These results are important for possible applications of GaN MOSHFETs in high power amplifiers and power switches as well as in non-volatile memory devices and integrated circuits that will operate in a much wider temperature range than conventional silicon and GaAs devices.

scholarly journals Microwave sensor technologies for food evaluation and analysis: Methods, challenges and solutions

2017 ◽  
Vol 40 (12) ◽  
pp. 3433-3448 ◽  
Author(s):  
Zhaozong Meng ◽  
Zhipeng Wu ◽  
John Gray
Keyword(s):  
Integrated Circuits ◽  
Information And Communication Technologies ◽  
Emerging Technologies ◽  
Wide Band ◽  
Sensor Technology ◽  
Smart Manufacturing ◽  
Comprehensive Overview ◽  
Line Measurement ◽  
Microwave Sensor ◽  
On Line

Microwave sensor technology is widely accepted as a non-destructive and hygienic means for food evaluation and analysis. However, its applications concentrate on in-lab investigations, which are not widely applied for on-line measurement in food industry. Motivated by the rapid progress of microwave technologies and the lack of on-line measurement systems in industry, this paper aims to provide a comprehensive overview of microwave sensors for food measurement, define the technological gap, and suggest the potential solutions. With a brief introduction to the fundamentals, classification and analysis of the traditional methods and technologies are presented, followed by a discussion of calibration and decision-making methods. Based on the analysis of the cutting-edge microwave sensing technologies, the limitations and challenges facing the present studies are identified. Then, focusing on some new emerging technologies including Monolithic Microwave Integrated Circuits, antenna array and System on Chip Ultra-Wide Band pulse-based time domain systems, the feasibility and prospective of potential solutions in this particular area are suggested. In addition, integration of emerging Information and Communication Technologies (ICT) and new design concepts of the sensor system concerning the practical use for smart manufacturing are also illustrated. The potentiality of the suggested new emerging technologies and integration of ICT to satisfy future digitised industry will be inspirational and of interest to researchers of both microwave engineering and food sectors.

CPW-Fed Wide Band Micro-machined Fractal Antenna with Band-notched Function

2020 ◽  
Vol 35 (8) ◽  
pp. 929-935
Author(s):  
Ashwini Kumar ◽  
Amar Pharwaha
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Wide Band ◽  
Impedance Bandwidth ◽  
Fractal Antenna ◽  
Sierpinski Carpet ◽  
Antenna Structure ◽  
High Frequency Structure Simulator ◽  
Novel Structure ◽  
Sierpiński Carpet

In this paper, a straightforward yet effective design methodology to design wideband antenna with band notched characteristics has been proposed. Sierpinski carpet fractal geometry has been used to realize the antenna structure. Co-planar waveguide feed is used with a novel structure to achieve larger impedance bandwidth and band notching characteristics. Proposed antenna is designed using High Frequency Structure Simulator (HFSS) on a low cost FR4 substrate (ɛr=4.4) which resonates at three frequencies 1.51 GHz (1.19-2.06GHz), 6.53 GHz and 8.99 GHz (4.44-9.54 GHz) while a band is notched at 10.46 GHz (9.32-11.92 GHz). The proposed antenna has an electrical dimension of 0.36 λm× 0.24 λm, here λm is the wavelength with respect to lowest resonating frequency of the antenna. The resonating and radiation characteristics of the antenna are verified experimentally. Further, investigations are made to achieve easy integration of the antenna to the monolithic microwave integrated circuits. For that the antenna has been designed on micro-machined high index Silicon substrate which improve matching and gain of the antenna. The results of the micro-machined Sierpinski carpet fractal antenna are highly convincing over the conventional FR4 based antenna.

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