Precision measurements of quantum hall resistance plateau in doping-controlled graphene device

2016 ◽  
Author(s):  
Dong-Hun Chae ◽  
Wan-Seop Kim ◽  
Alexandre Satrapinski ◽  
Sergei Novikov
Keyword(s):  
Quantum Hall ◽  
Precision Measurements ◽  
Hall Resistance ◽  
In Doping

Anomalous quantum-Hall resistance in bilayer counterflow transport

2007 ◽  
Vol 4 (2) ◽  
pp. 485-488
Author(s):  
Z. F. Ezawa ◽  
S. Suzuki ◽  
G. Tsitsishvili
Keyword(s):  
Quantum Hall ◽  
Hall Resistance

Preliminary results on GaAs-algaas heterostructure quantum Hall resistance standard by the NIM

CPEM 2010 ◽  
2010 ◽  
Author(s):  
Y. Zhong ◽  
Q. Zhong ◽  
Q. He ◽  
Y. F. Lu ◽  
J. T. Zhao ◽  
...  
Keyword(s):  
Quantum Hall ◽  
Hall Resistance ◽  
Preliminary Results ◽  
Resistance Standard

INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1445-1449
Author(s):  
K. TAKEHANA ◽  
Y. IMANAKA ◽  
T. TAKAMASU ◽  
M. HENINI
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Gate Voltage ◽  
Quantum Hall ◽  
Electron System ◽  
Hall Resistance ◽  
Field Range ◽  
Voltage Range ◽  
Quantum Hall Regime ◽  
Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

FISDW in quasi-one dimensional organic conductors with the dimerized gap due to anion ordering

2002 ◽  
Vol 12 (9) ◽  
pp. 381-384
Author(s):  
N. Matsunaga ◽  
A. Ayari ◽  
P. Moncea ◽  
K. Yamashita ◽  
A. Ishikawa ◽  
...  
Keyword(s):  
Phase Transition ◽  
Ground State ◽  
Quantum Hall ◽  
Organic Conductors ◽  
Hall Resistance ◽  
Cooling Rates ◽  
One Dimensional ◽  
Stable Quantum ◽  
New Phase ◽  
Quantum Hall State

Magnetoresistance and Hall resistance measurements have been carried out in the FISDW phase of deuterated (TMTSF)2C1O4 for various cooling rates through the anion ordering temperature. The Hall resistance in the intermediate cooled state, observed a very stable quantum Hall state above 9.0 T for slowly cooled, shows a step-like change from the phase between 10 and 17 T to the phase between 20 and 25 T with hysteresis between 14 and 21 T. This result suggests that there is a new phase transition around 15 T in deuterated (TMTSF)4ClO4. A possible ground state of the FISDW phase of (TMTSF)2C1O4 for various cooling rates is discussed from the viewpoint of the peculiar SDW nesting vector stabilized by the dimerized gap due to anion ordering.

Quantum Hall resistance traceability for the NIST-4 watt balance

2016 ◽  
Author(s):  
Dean Jarrett ◽  
Rand Elmquist ◽  
Marlin Kraft ◽  
George Jones ◽  
Shamith Payagala ◽  
...  
Keyword(s):  
Quantum Hall ◽  
Hall Resistance ◽  
Watt Balance
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