Temperature and Gravity Dependent I-V Characteristics of Organic Semiconductor Diode

2006 ◽  
Author(s):  
S.A. Moiz ◽  
Kh. S. Karimov ◽  
M. Mehmood
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Diode

scholarly journals Characterization of an organic semiconductor diode for dosimetry in radiotherapy

2020 ◽  
Vol 47 (8) ◽  
pp. 3658-3668 ◽  
Author(s):  
Jessie A. Posar ◽  
Jeremy Davis ◽  
Matthew J. Large ◽  
Laura Basiricò ◽  
Andrea Ciavatti ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Diode

Determination of the interface δ-hole density in a blue-emitting organic semiconductor diode by electromodulated absorption spectroscopy

2010 ◽  
Vol 97 (11) ◽  
pp. 113505 ◽  
Author(s):  
Mi Zhou ◽  
Rui-Qi Png ◽  
Sankaran Sivaramakrishnan ◽  
Perq-Jon Chia ◽  
Chaw-Keong Yong ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Organic Semiconductor ◽  
Semiconductor Diode ◽  
Hole Density

scholarly journals Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics

ETRI Journal ◽  
2005 ◽  
Vol 27 (3) ◽  
pp. 319-325 ◽  
Author(s):  
Syed Abdul Moiz ◽  
Mansoor M. Ahmed ◽  
Kh. S. Karimov
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Diode ◽  
Electrical Parameters

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Homogenization of Organic Semiconductor Films Formed by Vertical Electro-spray Deposition

2020 ◽  
Vol 140 (4) ◽  
pp. 179-185
Author(s):  
Hiroshi Yamauchi ◽  
Yugo Okada ◽  
Takashi Tadokoro ◽  
Kazuhiro Kudo
Keyword(s):  
Organic Semiconductor ◽  
Spray Deposition ◽  
Semiconductor Films
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