External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes

Author(s):  
T. Inoue ◽  
K. Fujiwara ◽  
J. K. Sheu
2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.


1987 ◽  
Vol 19 (1) ◽  
pp. 61-71 ◽  
Author(s):  
L Kador ◽  
R Personov ◽  
W Richter ◽  
Th Sesselmann ◽  
D Haarer

2002 ◽  
Vol 91 (1) ◽  
pp. 232 ◽  
Author(s):  
M. Bouhassoune ◽  
R. Charrour ◽  
M. Fliyou ◽  
D. Bria ◽  
A. Nougaoui

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