Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

Author(s):  
S. Mokkapati ◽  
P. Lever ◽  
H.H. Tan ◽  
C. Jagadish ◽  
K.E. McBean ◽  
...  
Author(s):  
Guangyu Liu ◽  
Hongping Zhao ◽  
Jing Zhang ◽  
Joo-Hyung Park ◽  
L J Mawst ◽  
...  

2003 ◽  
Vol 775 ◽  
Author(s):  
Terence S. Yeoh ◽  
Reuel B. Swint ◽  
Victor C. Elarde ◽  
James J. Coleman

AbstractThe surface of strained InGaAs films on GaAs for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. Various InxGa1-xAs films were annealed at temperatures between 400°C - 800°C. Significant indium desorption was found to occur at temperatures above 550°C.


2004 ◽  
Vol 272 (1-4) ◽  
pp. 148-153 ◽  
Author(s):  
V.C. Elarde ◽  
T.S. Yeoh ◽  
R. Rangarajan ◽  
J.J. Coleman

2011 ◽  
Vol 6 (1) ◽  
Author(s):  
Guangyu Liu ◽  
Hongping Zhao ◽  
Jing Zhang ◽  
Joo Hyung Park ◽  
Luke J Mawst ◽  
...  

2004 ◽  
Vol 84 (16) ◽  
pp. 3031-3033 ◽  
Author(s):  
T. S. Yeoh ◽  
R. B. Swint ◽  
V. C. Elarde ◽  
J. J. Coleman

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