An on-chip active frequency multiplier-by-seven (X-band to W-band) for millimeter-wave signal generation

2015 ◽  
Author(s):  
Firass Mustafa ◽  
Eliezer Halpern ◽  
Eran Socher
Keyword(s):  
Millimeter Wave ◽  
Frequency Multiplier ◽  
Signal Generation ◽  
Wave Signal ◽  
W Band ◽  
X Band ◽  
On Chip

Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation

2009 ◽  
Vol 57 (12) ◽  
pp. 3134-3142 ◽  
Author(s):  
M. Abbasi ◽  
R. Kozhuharov ◽  
C. Karnfelt ◽  
I. Angelov ◽  
I. Kallfass ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Frequency Multiplier ◽  
Signal Generation ◽  
Single Chip ◽  
Wave Signal

scholarly journals W-Band 8QAM Vector Millimeter-Wave Signal Generation Based on Tripling of Frequency Without Phase Pre-Coding

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 156978-156983 ◽  
Author(s):  
Lun Zhao ◽  
Lian Xiong ◽  
Mingxia Liao ◽  
Jun Xia ◽  
Yucai Pang ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Signal Generation ◽  
Wave Signal ◽  
W Band

Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 225-233 ◽  
Author(s):  
Thomas Jensen ◽  
Thualfiqar Al-Sawaf ◽  
Marco Lisker ◽  
Srdjan Glisic ◽  
Mohamed Elkhouly ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Millimeter Wave ◽  
Frequency Multiplier ◽  
Wafer Level ◽  
Voltage Controlled Oscillators ◽  
Wave Signal ◽  
W Band ◽  
Bicmos Technology ◽  
Signal Sources

The paper presents millimeter-wave (mm-wave) signal sources using a hetero-integrated InP-on-BiCMOS semiconductor technology. Mm-wave signal sources feature fundamental frequency voltage-controlled oscillators (VCOs) in BiCMOS, which drive frequency multiplier–amplifier chains in transferred-substrate (TS) InP-DHBT technology, heterogeneously integrated on top of the BiCMOS wafer in a wafer-level bonding process. Both circuits are biased through a single set of bias pads and compact low-loss transitions from BiCMOS to InP circuits and vice versa have been developed, which allows seamless signal routing through both technologies exhibiting 0.5 dB insertion loss up to 200 GHz. One VCO operates at 82 GHz with a tuning range of 600 MHz and an output power of approximately 8 dBm. A frequency doubler combined with this VCO circuit delivers 0 dBm at 164 GHz and a frequency tripler with a similar VCO delivers −10 dBm at 246 GHz. Another hetero-integrated W-band doubler–amplifier circuit demonstrates 12.9 dBm saturated output power with 5.9 dB conversion gain at 96 GHz. A direct comparison of the TS InP-DHBT MMIC with either silicon or traditional AlN carrier substrates shows the favorable properties of the hetero-integrated process discussed here. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.

W-band millimeter-wave signal generation based on frequency quadrupling and nonlinearities tolerant modulation

2020 ◽  
pp. 1-1
Author(s):  
Jiangnan Xiao ◽  
Xingxing Feng ◽  
Mingming Zhao ◽  
Bo Liu ◽  
Xu Dong ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Signal Generation ◽  
Wave Signal ◽  
W Band
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