Parameter extraction from 110+ GHz S-parameter measurements: A heuristic analysis of sensitivity and uncertainty propagation

2011 ◽  
Author(s):  
J. Martens
Keyword(s):  
Uncertainty Propagation ◽  
Parameter Extraction ◽  
S Parameter ◽  
Heuristic Analysis

scholarly journals Silicon Carbide BJT Oscillator Design Using S-Parameters

2019 ◽  
Vol 963 ◽  
pp. 674-678
Author(s):  
Muhammad Waqar Hussain ◽  
Hossein Elahipanah ◽  
Saul Rodriguez ◽  
Bengt Gunnar Malm ◽  
Ana Rusu
Keyword(s):  
Room Temperature ◽  
Design Method ◽  
Model Fitting ◽  
Simulation Models ◽  
Parameter Extraction ◽  
Extraction Process ◽  
Large Signal ◽  
S Parameter ◽  
Wafer Probing ◽  
Modelling Effort

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

scholarly journals A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 266
Author(s):  
Ruirui Dang ◽  
Lijie Yang ◽  
Zhihao Lv ◽  
Chunyi Song ◽  
Zhiwei Xu
Keyword(s):  
Parameter Extraction ◽  
New Method ◽  
Small Signal ◽  
Gate Bias ◽  
Large Signal ◽  
S Parameter ◽  
Proposed Model ◽  
Measurement Results ◽  
Parasitic Parameter ◽  
Signal Models

Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.

Crosstalk Simulation Based on Full Wave S-Parameter Extraction Method between High-Speed Signals

2012 ◽  
Vol 433-440 ◽  
pp. 3514-3520
Author(s):  
Hong Tao Sun ◽  
Shu Guo Xie ◽  
Yan Liu ◽  
Bang Jun Chen
Keyword(s):  
Transmission Lines ◽  
High Speed ◽  
Printed Circuit Board ◽  
Simulation Method ◽  
Parameter Extraction ◽  
Circuit Board ◽  
Frequency Domain Method ◽  
Coupling Mechanism ◽  
Full Wave ◽  
S Parameter

Crosstalk between high speed parallel bus signals is one of the most important signal integrity(SI) issues. In this article, a crosstalk simulation method based on full-wave scattering parameters extraction for transmission lines is researched. First, the coupling mechanism between transmission lines is analyzed using S-Parameter network theory and a fast frequency-domain method for crosstalk calculation is introduced. Then based on this method, some basic rules of crosstalk are studied in details and the method is validated by simulation results which agree well with those of RLGC model. At the end of this paper, a practical crosstalk simulation example between high speed data bus signals on a 8-layered printed circuit board is demonstrated step by step.

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