Laser micron particle removal from silicon surfaces: a bidimensional approach

2002 ◽  
Author(s):  
P. Neves ◽  
M. Arronte ◽  
R. Vilar
Keyword(s):  
Silicon Surfaces ◽  
Particle Removal ◽  
Micron Particle

The Role of HO2− in SC-1 Cleaning Solutions

1997 ◽  
Vol 477 ◽  
Author(s):  
Steven Verhaverbeke ◽  
Jennifer W. Parker ◽  
Chris F. McConnell
Keyword(s):  
Hydrogen Peroxide ◽  
Silicon Oxide ◽  
Bubble Formation ◽  
Ammonium Hydroxide ◽  
Silicon Surfaces ◽  
Wafer Surface ◽  
Particle Removal ◽  
Oxide Interface ◽  
Protective Oxide ◽  
Industry Standard

The RCA Standard Clean, developed by W. Kern and D. Puotinen in 1965 and disclosed in 1970 [1] is extremely effective at removing contamination from silicon surfaces and is the defacto industry standard.[2]. The RCA clean consists of two sequential steps: the Standard Clean 1 (SC-1) followed by the Standard Clean 2 (SC-2). The SC-1 solution, consisting of a mixture of ammonium-hydroxide, hydrogen-peroxide, and water, is the most efficient particle removing agent found to date. This mixture is also referred to as the Ammonium- Hydroxide/Hydrogen-Peroxide Mixture (APM). In the past, SC-1 solutions had the tendency to deposit metals on the surface of the wafers, and consequently treatment with the SC-2 mixture was necessary to remove metals. Ultra-clean chemicals minimize the need for SC-2 processing. SC-I solutions facilitate particle removal by etching the wafer underneath the particles; thereby loosening the particles, so that mechanical forces can readily remove the particles from the wafer surface. The ammonium hydroxide in the solution steadily etches silicon dioxide at the boundary between the oxide and the aqueous solution (i.e., the wafer surface). The hydrogen peroxide in SC-I serves to protect the surface from attack by OH" by re-growing a protective oxide directly on the silicon surface (i.e., at the silicon/oxide interface). If sufficient hydrogen peroxide is not present in the solution, the silicon will be aniostropically etched and surface roughening will quickly occur. On the other hand, hydrogen peroxide readily dissociates and forms water and oxygen. If the concentration of the resulting oxygen is too high, bubbles will appear in the solution. The gas liquid interfaces that result from the bubble formation act as a “getter” for particles that can re-deposit on the wafer surface if a bubble comes in contact with the wafer.

Laser-assisted particle removal from silicon surfaces

1993 ◽  
Vol 20 (1-2) ◽  
pp. 145-157 ◽  
Author(s):  
S.J. Lee ◽  
K. Imen ◽  
S.D. Allen
Keyword(s):  
Silicon Surfaces ◽  
Particle Removal

CO2 laser-assisted particle removal from silicon surfaces

1996 ◽  
Vol 74 (S1) ◽  
pp. 95-99
Author(s):  
J. B. Héroux ◽  
S. Boughaba ◽  
E. Sacher ◽  
M. Meunier
Keyword(s):  
Co2 Laser ◽  
Laser Fluence ◽  
Final Concentration ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Particle Removal ◽  
Particle Counter ◽  
Raster Scan ◽  
Alumina Particles ◽  
Removal System

A CO2 laser particle removal system was built that enables the removal of 0.1 μm alumina particles from silicon substrates. This system has raster scan capabilities to clean large surfaces, which were analysed using a particle counter. After deposition and removal of 0.1 μm alumina particles, the final concentration is less than 25 particles cm−2 for particle clusters between 0.1 and 10 μm. The efficiency of particle removal is nearly independent of the laser fluence between 0.65 and 2.9 J cm−2 and drops suddenly below 0.65 J cm−2.

The modeling of excimer laser particle removal from hydrophilic silicon surfaces

2000 ◽  
Vol 87 (8) ◽  
pp. 3618-3627 ◽  
Author(s):  
X. Wu ◽  
E. Sacher ◽  
M. Meunier
Keyword(s):  
Excimer Laser ◽  
Silicon Surfaces ◽  
Particle Removal

Investigation of Particle Removal from Silicon Surfaces by Means of Dry and Steam Laser Cleaning

2003 ◽  
Vol 92 ◽  
pp. 133-134 ◽  
Author(s):  
P. Leiderer ◽  
M. Mosbacher ◽  
J. Boneberg ◽  
C. Bartels ◽  
F. Lang ◽  
...  
Keyword(s):  
Laser Cleaning ◽  
Silicon Surfaces ◽  
Particle Removal

Wet Chemical Cleaning of Organosilane Monolayers

2021 ◽  
Vol 314 ◽  
pp. 54-59
Author(s):  
Adam P. Hinckley ◽  
Anthony J. Muscat
Keyword(s):  
Self Assembly ◽  
Surface Preparation ◽  
Ammonium Hydroxide ◽  
Silicon Surfaces ◽  
Particle Removal ◽  
Chemical Cleaning ◽  
Self Assembled Monolayer ◽  
Metal Oxide Surfaces ◽  
Aqueous Mixture ◽  
Self Assembled

Thin organic self-assembled monolayer films are used to promote adhesion and seal the pores of metal oxides as well as direct the deposition of layers on patterned surfaces. Defects occur as the self-assembled monolayer forms, and the number and type of defects depend on surface preparation, deposition solvent, temperature, time and other parameters. Particles commonly deposit during organosilane self-assembly on metal oxide surfaces. The particles are defects because they are prone to react in subsequent processing, which may not be desirable if the organosilane serves as a pore sealant or passivation layer. Cleaning the organosilane by solvent extraction to remove non-polar agglomerates followed by an aqueous mixture of ammonium hydroxide and hydrogen peroxide, which is Standard Clean 1, a common particle removal step for silicon surfaces, produced monolayers with few agglomerates based on atomic force microscopy without etching the layer. The combined cleaning sequence contained fewer particles than separate cleaning steps, showing that the cleans removed particles with different compositions. The thickness and contact angle of cleaned monolayers was comparable to those made using a costlier solvent.

The E-ring: interactions with plasma and implications for its evolution

1984 ◽  
Vol 75 ◽  
pp. 599-602
Author(s):  
T.V. Johnson ◽  
G.E. Morfill ◽  
E. Grun
Keyword(s):  
Time Scale ◽  
Particle Density ◽  
High Energy ◽  
Particle Removal ◽  
Density Region ◽  
Drag Forces ◽  
Orbit Evolution ◽  
History Of ◽  
Ring Particle ◽  
Ring Material

A number of lines of evidence suggest that the particles making up the E-ring are small, on the order of a few microns or less in size (Terrile and Tokunaga, 1980, BAAS; Pang et al., 1982 Saturn meeting; Tucson, AZ). This suggests that a variety of electromagnetic and plasma affects may be important in considering the history of such particles. We have shown (Morfill et al., 1982, J. Geophys. Res., in press) that plasma drags forces from the corotating plasma will rapidly evolve E-ring particle orbits to increasing distance from Saturn until a point is reached where radiation drag forces acting to decrease orbital radius balance this outward acceleration. This occurs at approximately Rhea's orbit, although the exact value is subject to many uncertainties. The time scale for plasma drag to move particles from Enceladus' orbit to the outer E-ring is ~104yr. A variety of effects also act to remove particles, primarily sputtering by both high energy charged particles (Cheng et al., 1982, J. Geophys. Res., in press) and corotating plasma (Morfill et al., 1982). The time scale for sputtering away one micron particles is also short, 102 - 10 yrs. Thus the detailed particle density profile in the E-ring is set by a competition between orbit evolution and particle removal. The high density region near Enceladus' orbit may result from the sputtering yeild of corotating ions being less than unity at this radius (e.g. Eviatar et al., 1982, Saturn meeting). In any case, an active source of E-ring material is required if the feature is not very ephemeral - Enceladus itself, with its geologically recent surface, appears still to be the best candidate for the ultimate source of E-ring material.

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