Saturable absorber mirrors based on polymer-embedded carbon nanotubes and their application to ultrashort pulse generation

2006 ◽  
Author(s):  
T. R. Schibli ◽  
K. Minoshima ◽  
H. Kataura ◽  
E. Itoga ◽  
M. Tokumoto ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Saturable Absorber ◽  
Ultrashort Pulse ◽  
Pulse Generation ◽  
Ultrashort Pulse Generation

scholarly journals Ultrashort pulse-generation by saturable absorber mirrors based on polymer-embedded carbon nanotubes

2005 ◽  
Vol 13 (20) ◽  
pp. 8025 ◽  
Author(s):  
T. R. Schibli ◽  
K. Minoshima ◽  
H. Kataura ◽  
E. Itoga ◽  
N. Minami ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Saturable Absorber ◽  
Ultrashort Pulse ◽  
Pulse Generation ◽  
Ultrashort Pulse Generation

scholarly journals Black phosphorus saturable absorber for ultrashort pulse generation

2015 ◽  
Vol 107 (5) ◽  
pp. 051108 ◽  
Author(s):  
J. Sotor ◽  
G. Sobon ◽  
W. Macherzynski ◽  
P. Paletko ◽  
K. M. Abramski
Keyword(s):  
Saturable Absorber ◽  
Ultrashort Pulse ◽  
Pulse Generation ◽  
Black Phosphorus ◽  
Ultrashort Pulse Generation

Emerging uniform Cu2O nanocubes for 251st harmonic ultrashort pulse generation

2020 ◽  
Vol 8 (41) ◽  
pp. 14386-14392
Author(s):  
Xiaohui Li ◽  
Jiangjiang Feng ◽  
Wenjing Mao† ◽  
Feng Yin ◽  
Jie Jiang
Keyword(s):  
Pulse Laser ◽  
Saturable Absorber ◽  
Ultrashort Pulse ◽  
Pulse Generation ◽  
Ultrashort Pulse Laser ◽  
Ultrashort Pulse Generation

We experimentally demonstrated a 251st harmonic ultrashort pulse laser based on Cu2O nanocubes as a saturable absorber.

Novel AlGaAs/CaF2 SESAM Device for Ultrashort Pulse Generation

2001 ◽  
Vol 692 ◽  
Author(s):  
Silke Schön ◽  
Lukas Gallmann ◽  
Markus Haiml ◽  
Ursula Keller
Keyword(s):  
Saturable Absorber ◽  
Ultrashort Pulse ◽  
Optical Switching ◽  
Modulation Depth ◽  
Pulse Generation ◽  
Absorber Material ◽  
Semiconductor Saturable Absorber ◽  
All Optical ◽  
Ultrashort Pulse Generation ◽  
All Optical Switching

AbstractA novel ultrabroadband AlGaAs/CaF2 semiconductor saturable absorber mirror (SESAM) covering nearly the entire Ti:sapphire gain spectrum is demonstrated. This device supports sub-10-fs pulse operation of a laser. In contrast to previous SESAMs of comparable bandwidth, our device can be monolithically grown by molecular beam epitaxy and requires no post-growth processing. GaAs is used as semiconductor saturable absorber material. The high defect concentration of the material is due to the lattice-mismatched growth on a fluoride surface with (111) orientation. With a time response of 1.2 ps for carrier trapping, a saturation fluence of 36 μJ/cm2 and a modulation depth of up to 2.2% , the GaAs saturable absorber is well-suited for all-optical switching in SESAM devices used for ultrashort pulse generation.

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