Short pulse generation via ground and excited state from an external cavity mode-locked quantum dot two section laser diode

2006 ◽  
Author(s):  
J. Kim ◽  
M.T. Choi ◽  
W. Lee ◽  
P. J. Delfyett
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Laser Diode ◽  
Cavity Mode ◽  
Short Pulse ◽  
External Cavity ◽  
Pulse Generation ◽  
Short Pulse Generation

scholarly journals High-frequency short-pulse generation with a highly stacked InAs quantum dot mode-locked laser diode

2021 ◽  
Vol 60 (SB) ◽  
pp. SBBH02
Author(s):  
Kouichi Akahane ◽  
Atsushi Matsumoto ◽  
Toshimasa Umezawa ◽  
Naokatsu Yamamoto
Keyword(s):  
Quantum Dot ◽  
Laser Diode ◽  
High Frequency ◽  
Short Pulse ◽  
Pulse Generation ◽  
Short Pulse Generation ◽  
Mode Locked Laser ◽  
Inas Quantum Dot

Continuous and Widely Wavelength-Tunable Optical Short Pulse Generation by Use of a Self-Seeded Fabry-Pérot Laser Diode

2005 ◽  
Vol 22 (8) ◽  
pp. 1920-1922 ◽  
Author(s):  
Fang Xiao-Hui ◽  
Chen Jin-Hua ◽  
Wang Dong-Ning ◽  
Jin Wei ◽  
Tong Fu-Wua
Keyword(s):  
Laser Diode ◽  
Short Pulse ◽  
Pulse Generation ◽  
Wavelength Tunable ◽  
Fabry Perot ◽  
Short Pulse Generation

Short Pulse Generation from Gain-Switched Quantum Dot Laser

2021 ◽  
Author(s):  
Nuran Dogru ◽  
Hilal S. Duranoglu Tunc ◽  
Ali Mumtaz Al-Dabbagh
Keyword(s):  
Quantum Dot ◽  
Short Pulse ◽  
Pulse Generation ◽  
Quantum Dot Laser ◽  
Short Pulse Generation

Tailoring Quantum Dot Saturable Absorber Mirrors for Ultra-Short Pulse Generation

2008 ◽  
Vol 1076 ◽  
Author(s):  
Matthew Lumb ◽  
Edmund Clarke ◽  
Dominic Farrell ◽  
Michael Damzen ◽  
Ray Murray
Keyword(s):  
Quantum Dot ◽  
Saturable Absorber ◽  
Short Pulse ◽  
Normal Incidence ◽  
Spectroscopic Studies ◽  
Pulse Generation ◽  
Device Performance ◽  
Time Resolved ◽  
Short Pulse Generation ◽  
Ultra Short Pulse

ABSTRACTWe have designed and grown a series of quantum dot semiconductor saturable absorber mirrors (QD-SESAMs) for a range of operating wavelengths, incorporating innovative design and processing features to optimise the device performance. Using a range of reflectivity studies, ellipsometric measurements and both time-integrated and time-resolved spectroscopic studies, we have conducted detailed investigations of device performance. Extensive modelling work of dielectric multilayers has been undertaken which supports our experimental findings and allows us to understand and design novel structures in order to improve and tailor device characteristics, including dielectric capping and non-normal incidence. We demonstrate samples designed for operation with the higher excited-states of the QDs which produced a self-starting train of mode-locked pulses with a temporal duration of 200 ps at a repetition rate of 78 MHz in a Nd:YVO4 solid-state laser. We also present SESAMs incorporating electronically coupled QD bilayers, allowing long wavelength operation.

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