Polarization-dependence in multiquantum well lasers and semiconductor optical amplifiers: probing interwell transport effects

2000 ◽  
Author(s):  
D. Ban ◽  
E.C.F. Wong ◽  
E.H. Sargent
Keyword(s):  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Polarization Dependence ◽  
Transport Effects ◽  
Multiquantum Well

scholarly journals All-Optical Non-Inverted Parity Generator and Checker Based on Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (4) ◽  
pp. 1499
Author(s):  
Bingchen Han ◽  
Junyu Xu ◽  
Pengfei Chen ◽  
Rongrong Guo ◽  
Yuanqi Gu ◽  
...  
Keyword(s):  
Optical Amplifiers ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Extinction Ratio ◽  
Semiconductor Optical Amplifiers ◽  
Optical Signal ◽  
Probe Light ◽  
All Optical ◽  
Negative Effect ◽  
Parity Generator

An all-optical non-inverted parity generator and checker based on semiconductor optical amplifiers (SOAs) are proposed with four-wave mixing (FWM) and cross-gain modulation (XGM) non-linear effects. A 2-bit parity generator and checker using by exclusive NOR (XNOR) and exclusive OR (XOR) gates are implemented by first SOA and second SOA with 10 Gb/s return-to-zero (RZ) code, respectively. The parity and check bits are provided by adjusting the center wavelength of the tunable optical bandpass filter (TOBPF). A saturable absorber (SA) is used to reduce the negative effect of small signal clock (Clk) probe light to improve extinction ratio (ER) and optical signal-to-noise ratio (OSNR). For Pe and Ce (even parity bit and even check bit) without Clk probe light, ER and OSNR still maintain good performance because of the amplified effect of SOA. For Po (odd parity bit), ER and OSNR are improved to 1 dB difference for the original value. For Co (odd check bit), ER is deteriorated by 4 dB without SA, while OSNR is deteriorated by 12 dB. ER and OSNR are improved by about 2 dB for the original value with the SA. This design has the advantages of simple structure and great integration capability and low cost.

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