Implementation of mathematical models of power devices for circuit simulation in PSpice

2002 ◽  
Author(s):  
M. Cotorogea
Keyword(s):  
Mathematical Models ◽  
Circuit Simulation ◽  
Power Devices

scholarly journals Modeling and analysis of the characteristics of SiC MOSFET

2021 ◽  
Vol 2125 (1) ◽  
pp. 012051
Author(s):  
Guoqing Qiu ◽  
Kedi Jiang ◽  
Shengyou Xu ◽  
Xin Yang ◽  
Wei Wang
Keyword(s):  
Simulation Model ◽  
Circuit Simulation ◽  
Power Conversion ◽  
Simulation Models ◽  
Data Sheet ◽  
Superior Performance ◽  
Power Devices ◽  
Matlab Simulink ◽  
Modeling And Analysis ◽  
Mathematical Processing

Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOSFET model, and then the product data sheet is compared with the fitted data. The results show that the switching simulation waveforms are in general agreement with the data sheet waveforms, and the error is less than 7%. Verifing the accuracy of the model and reducing the difficulty of modeling, it provides a new idea for establishing the circuit simulation model of SiC MOSFET in Matlab/Simulink.

Fractional-Order Modeling and Simulation of Magnetic Coupled Boost Converter in Continuous Conduction Mode

2018 ◽  
Vol 28 (05) ◽  
pp. 1850061 ◽  
Author(s):  
Zirui Jia ◽  
Chongxin Liu
Keyword(s):  
Mathematical Model ◽  
Mathematical Models ◽  
Fractional Order ◽  
Transfer Functions ◽  
Circuit Simulation ◽  
Boost Converter ◽  
Averaged Model ◽  
Conduction Mode ◽  
State Average ◽  
Continuous Conduction Mode

By using fractional-order calculus theory and considering the condition that capacitor and inductor are naturally fractional, we construct the fractional mathematical model of the magnetic coupled boost converter with tapped-inductor in the operation of continuous conduction mode (CCM). The fractional state average model of the magnetic coupled boost converter in CCM operation is built by exploiting state average modeling method. In these models, the effects of coupling factor, which is viewed as one generally, are directly pointed out. The DC component, the AC component, the transfer functions and the requirements of the magnetic coupled boost converter in CCM operation are obtained and investigated on the basis of the state averaged model as well as its fractional mathematical model. Using the modified Oustaloup’s method for filter approximation algorithm, the derived models are simulated and compared using Matlab/Simulink. In order to further verify the fractional model, circuit simulation is implemented. Furthermore, the differences between the fractional-order mathematical models and the corresponding integer-order mathematical models are researched. Results of the model and circuit simulations validate the effectiveness of theoretical analysis.

scholarly journals Parasitic extraction and power loss estimation of power devices

2020 ◽  
Vol 37 ◽  
pp. 134-148
Author(s):  
H-C Cheng ◽  
Y-H Shen ◽  
W-H Chen
Keyword(s):  
Circuit Simulation ◽  
Three Dimensional ◽  
Loss Estimation ◽  
Oxide Semiconductor ◽  
Switching Loss ◽  
Power Devices ◽  
Power Mosfet ◽  
Phase Inverter ◽  
Three Phase ◽  
Three Phase Inverter

Abstract This study aims to characterize the switching transients and power losses of silicon (Si) power metal–oxide–semiconductor field-effect transistor (MOSFET) in an SOT-227 package (hereinafter named “power MOSFET package”) and Si power MOSFET-based three-phase MOSFET inverter during load cycles through numerical modeling and experimental validation. The three-phase inverter comprises six power MOSFET packages as switches for brushless direct current motor drive. First of all, three-dimensional electromagnetic analyses are performed to extract the parasitic parameters of these two power devices. Subsequently, the device model and the previously derived package model of the power MOSFET are combined together in circuit simulation of a double pulse test (DPT). The calculated waveform profiles and switching times are compared with those obtained from the DPT experiment. Likewise, an effective compact circuit simulation model of the three-phase six-switch inverter, considering the parasitic effects, is developed for the switching loss estimation in the first switching interval of the six-step switching sequence. At last, parametric study is performed to explore, respectively, the influences of some crucial factors on the parasitic inductances and switching transients of the power MOSFET package and the switching losses of the three-phase inverter.

scholarly journals Analog Realization of Fractional-Order Capacitor and Inductor via the Caputo–Fabrizio Derivative

2021 ◽  
Vol 25 (3) ◽  
pp. 291-300
Author(s):  
Manjie Ran ◽  
◽  
Xiaozhong Liao ◽  
Da Lin ◽  
Ruocen Yang
Keyword(s):  
Numerical Simulation ◽  
Mathematical Models ◽  
Fractional Order ◽  
Circuit Simulation ◽  
Circuit Analysis ◽  
Electrical Characteristics ◽  
Electronic Components ◽  
Electrical Circuits ◽  
Impedance Models

Capacitors and inductors have been proven to exhibit fractional-order characteristics. Therefore, the establishment of fractional-order models for circuits containing such components is of great significance in practical circuit analysis. This study establishes the impedance models of fractional-order capacitors and inductors based on the Caputo–Fabrizio derivative and performs the analog realization of fractional-order electronic components. The mathematical models of fractional RC, RL, and RLC electrical circuits are deduced and verified via a comparison between the numerical simulation and the corresponding circuit simulation. The electrical characteristics of the fractional circuits are analyzed. This study not only enriches the models of fractional capacitors and inductors, but can also be applied to the description of circuit characteristics to obtain more accurate results.

Nonlinear Circuit Simulation and Modeling

2018 ◽  
Author(s):  
José Carlos Pedro ◽  
David E. Root ◽  
Jianjun Xu ◽  
Luís Cótimos Nunes
Keyword(s):  
Circuit Simulation ◽  
Simulation And Modeling ◽  
Nonlinear Circuit
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