A novel gate driver circuit for snubberless, low-noise operation of high power IGBT

Author(s):  
R. Sachdeva ◽  
E.P. Nowicki
2015 ◽  
Vol 46 (1) ◽  
pp. 1304-1307 ◽  
Author(s):  
Chih-Lung Lin ◽  
Mao-Hsun Cheng ◽  
Yuan-Wei Du ◽  
Po-Cheng Lai

Author(s):  
Rasoul Shalchi Alishah ◽  
Seyyed Hossein Hosseini

In recent, several numbers of multilevel inverter structures have been introduced that the numbers of circuit devices have been reduced.  This paper introduces a new structure for multilevel inverter which can be used in high-power applications. The proposed topology is based on cascaded connection of basic units. This topology consists of minimum number of circuit components such as IGBT, gate driver circuit and antiparallel diode. For proposed topology, two methods are presented for determination of dc voltage sources values. Multi-carrier PWM method for 25-level proposed topology is used. Verification of the analytical results is done using MATLAB simulation.


Author(s):  
Yan Xue ◽  
Kai Liu ◽  
Longjie Wang ◽  
Yu Zhang ◽  
Yuzhi Zheng ◽  
...  
Keyword(s):  

2021 ◽  
Vol 36 (3) ◽  
pp. 3450-3461
Author(s):  
Yatao Ling ◽  
Zhengming Zhao ◽  
Yicheng Zhu
Keyword(s):  

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