Determination of reactances of large hydro-generators using finite elements and domain decomposition

2002 ◽  
Author(s):  
E. Schmidt ◽  
C. Grabner ◽  
G. Traxler-Samek
Keyword(s):  
Finite Elements ◽  
Domain Decomposition

scholarly journals A non-overlapping Schwarz domain decomposition method with high-order finite elements for flow acoustics

2020 ◽  
Vol 369 ◽  
pp. 113223
Author(s):  
Alice Lieu ◽  
Philippe Marchner ◽  
Gwénaël Gabard ◽  
Hadrien Bériot ◽  
Xavier Antoine ◽  
...  
Keyword(s):  
Finite Elements ◽  
Domain Decomposition ◽  
Decomposition Method ◽  
Domain Decomposition Method ◽  
High Order ◽  
Overlapping Schwarz

Determination of residual stresses in disk keyways by the finite-elements method

1982 ◽  
Vol 14 (7) ◽  
pp. 865-867
Author(s):  
B. A. Kravchenko ◽  
V. G. Fokin ◽  
G. N. Gutman
Keyword(s):  
Finite Elements ◽  
Residual Stresses ◽  
Finite Elements Method

Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale

2017 ◽  
Vol 26 (1-2) ◽  
pp. 1-8
Author(s):  
Nikoletta Florini ◽  
George P. Dimitrakopulos ◽  
Joseph Kioseoglou ◽  
Nikos T. Pelekanos ◽  
Thomas Kehagias
Keyword(s):  
Finite Elements ◽  
Strain Field ◽  
Strain Distribution ◽  
Elastic Strain ◽  
Growth Direction ◽  
Current Status ◽  
Interface Plane ◽  
Fe Method ◽  
Semiconductor Nanostructure

AbstractWe are briefly reviewing the current status of elastic strain field determination in III–V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III–V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at the interface plane and along the growth direction. Therefore, we focus on the determination of the stress-strain fields in III–V heteroepitaxial nanostructures by experimental and theoretical methods with emphasis on the numerical FE method by means of anisotropic continuum elasticity (CE) approximation. Subsequently, we present our contribution to the field by coupling FE simulations on InAs quantum dots (QDs) grown on (211)B GaAs substrate, either uncapped or buried, and GaAs/AlGaAs core-shell nanowires (NWs) grown on (111) Si, with quantitative high-resolution transmission electron microscopy (HRTEM) methods and atomistic molecular dynamics (MD) calculations. Full determination of the elastic strain distribution can be exploited for band gap tailoring of the heterostructures by controlling the content of the active elements, and thus influence the emitted radiation.

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