Optimizing Lossy Compression with Adjacent Snapshots for N-body Simulation Data

Wavelet-based lossy compression of barotropic turbulence simulation data

Proceedings DCC 2002. Data Compression Conference ◽

10.1109/dcc.2002.1000022 ◽

2003 ◽

Author(s):

J.P. Wilson

Keyword(s):

Lossy Compression ◽

Simulation Data ◽

Turbulence Simulation

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Exploration of Pattern-Matching Techniques for Lossy Compression on Cosmology Simulation Data Sets

Lecture Notes in Computer Science - High Performance Computing ◽

10.1007/978-3-319-67630-2_4 ◽

2017 ◽

pp. 43-54 ◽

Cited By ~ 5

Author(s):

Dingwen Tao ◽

Sheng Di ◽

Zizhong Chen ◽

Franck Cappello

Keyword(s):

Pattern Matching ◽

Lossy Compression ◽

Data Sets ◽

Simulation Data ◽

Matching Techniques

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Lossy Compression of Haptic Data by Using DCT

IEEJ Transactions on Industry Applications ◽

10.1541/ieejias.130.945 ◽

2010 ◽

Vol 130 (8) ◽

pp. 945-952 ◽

Cited By ~ 4

Author(s):

Hiroyuki Tanaka ◽

Kouhei Ohnishi

Keyword(s):

Lossy Compression

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OPTIMAL OPERATION POINT IN 3D DCT- BASED LOSSY COMPRESSION OF COLOR AND MULTICHANNEL REMOTE SENSING IMAGES

Telecommunications and Radio Engineering ◽

10.1615/telecomradeng.v74.i20.40 ◽

2015 ◽

Vol 74 (20) ◽

pp. 1803-1821 ◽

Cited By ~ 4

Author(s):

V. V. Lukin ◽

S. K. Abramov ◽

R.A. Kozhemiakin ◽

Benoit Vozel ◽

B. Djurovic ◽

...

Keyword(s):

Remote Sensing ◽

Lossy Compression ◽

Optimal Operation ◽

Remote Sensing Images

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AN AUTOMATIC APPROACH TO LOSSY COMPRESSION OF AVIRIS HYPERSPECTRAL DATA

Telecommunications and Radio Engineering ◽

10.1615/telecomradeng.v69.i6.80 ◽

2010 ◽

Vol 69 (6) ◽

pp. 537-563 ◽

Cited By ~ 1

Author(s):

N. N. Ponomarenko ◽

M. S. Zriakhov ◽

A. Kaarna

Keyword(s):

Lossy Compression ◽

Hyperspectral Data

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Improved low-Reynolds-number k-epsilon-tilde model based on direct numerical simulation data

AIAA Journal ◽

10.2514/3.13775 ◽

1998 ◽

Vol 36 ◽

pp. 38-43

Author(s):

C. B. Hwang ◽

C. A. Lin

Keyword(s):

Numerical Simulation ◽

Reynolds Number ◽

Direct Numerical Simulation ◽

Low Reynolds Number ◽

Simulation Data ◽

Direct Numerical Simulation Data ◽

Model Based ◽

Low Reynolds

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Unrestrictive protein modification localization and quality control for open search of mass spectra

10.26434/chemrxiv.5797995 ◽

2018 ◽

Author(s):

Zhiwu An ◽

Fuzhou Gong ◽

Yan Fu

Keyword(s):

Mass Spectrometry ◽

Quality Control ◽

Tandem Mass Spectrometry ◽

Mass Spectra ◽

Protein Modification ◽

Software Tool ◽

Tandem Mass ◽

Simulation Data ◽

Post Translational Modifications

We have developed PTMiner, a first software tool for automated, confident filtering, localization and annotation of protein post-translational modifications identified by open (mass-tolerant) search of large tandem mass spectrometry datasets. The performance of the software was validated on carefully designed simulation data. <br>

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Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0517 ◽

2006 ◽

Author(s):

Cheng-Piao Lin ◽

Chin-Hsin Tang ◽

Cheng-Hsu Wu ◽

Cheng-Chun Ting

Keyword(s):

Copper Metallization ◽

Physical Analysis ◽

Electrical Characteristics ◽

Gate Leakage Current ◽

Data Retention ◽

Simulation Data ◽

Failure Data ◽

Dual Gate ◽

Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

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